Publicaciones

• Article dans une revue

The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors

C. Thelander, K.A. Dick, M.T. Borgström, L.E. Fröberg, P. Caroff, H.A. Nilsson, L. Samuelson

Nanotechnology, 2010, 21, pp.205703-1-9. ⟨10.1088/0957-4484/21/20/205703⟩. ⟨hal-00548956⟩

• Article dans une revue

Electron beam nanolithography in AZnLOF 2020

E. Herth, P. Tilmant, M. Faucher, M. François, Christophe Boyaval, Francois Vaurette, Y. Deblock, Bernard Legrand, L. Buchaillot

Microelectronic Engineering, 2010, 87, pp.2057-2060. ⟨10.1016/j.mee.2009.12.079⟩. ⟨hal-00548989⟩

• Article dans une revue

Existence and collapse of Fano resonances as a function of pinning field in simple mono-mode magnetic circuits

Housni Al-Wahsh

We consider, in the frame of long-wavelength Heisenberg model, the effect of a pinning field on the spin wave band gaps and transmission spectra of a simple magnonic device. This simple device is composed of an infinite one dimensional (1D) monomode waveguide (the backbone) along which N (N’) side...

The European Physical Journal B: Condensed Matter and Complex Systems, 2010, 73, pp.527-537. ⟨10.1140/epjb/e2010-00032-7⟩. ⟨hal-00549069⟩

• Article dans une revue

High-speed programming of nanowire-gated carbon-nanotube memory devices

G. Agnus, A. Filoramo, S. Lenfant, D. Vuillaume, J.P. Bourgoin, Vincent Derycke

Small, 2010, 6, pp.2659-2663. ⟨10.1002/smll.201001293⟩. ⟨hal-00548969⟩

• Article dans une revue

Optical response of resonator induced plasmon filters : nanometric diatomic structures

G.H. Cocoletzi, M.A. Palomino-Ovando, L. Dobrzynski, Bahram Djafari-Rouhani, Abdellatif Akjouj

Superlattices and Microstructures, 2010, 48, pp.380-387. ⟨10.1016/j.spmi.2010.07.011⟩. ⟨hal-00549441⟩

• Article dans une revue

Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

J. Kuzmik, C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, J.F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, K. Cico, K. Frölich, J. Skriniarova, J. Kovacs, G. Strasser, D. Pogany, E. Gornik

IEEE Transactions on Electron Devices, 2010, 57, pp.2144-2154. ⟨10.1109/TED.2010.2055292⟩. ⟨hal-00549465⟩

• Article dans une revue

A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices

T. Sadi, Jean-Luc Thobel

We present a three-dimensional (3D) semi-classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two-dimensional (2D) models. The advantages of our model, in terms of accuracy in...

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2010, 23, pp.200-214. ⟨10.1002/jnm.735⟩. ⟨hal-00549480⟩

• Article dans une revue

MEMS magneto-mechanical microvalves (MMMS) for aerodynamic active flow control

Philippe Pernod, Vladimir Preobrazhensky, A. Merlen, O. Ducloux, Abdelkrim Talbi, L. Gimeno, R. Viard, Nicolas Tiercelin

Journal of Magnetism and Magnetic Materials, 2010, 322, pp.1642-1646. ⟨10.1016/j.jmmm.2009.04.086⟩. ⟨hal-00549558⟩

• Article dans une revue

Terahertz spiral planar Goubau line rejectors for biological characterization

A. Treizebre, Maxence Hofman, Bertrand Bocquet

Terahertz spectroscopy brings precious complementary information in life science by probing directly low energy bindings inside matter. This property has been demonstrated on dehydrated substances, and interesting results are obtained on liquid solutions. The next step is the characterization of...

Progress In Electromagnetics Research M, 2010, 14, pp.163-176. ⟨10.2528/PIERM10072110⟩. ⟨hal-00549501⟩

• Communication dans un congrès

Conception dun microsystème acoustique permettant la caractérisation ultrasonore haute fréquence en transmission

Assane Ndieguene, Shengxiang Wang, Julien Carlier, Pierre Campistron, Wei-Jiang Xu, Dorothée Debavelaere-Callens, Bertrand Nongaillard, Xingzhong Zhao

Lintégration de miroirs à 45° dans des substrats de silicium a permis de générer des ondes ultrasonores longitudinales ou transversales hautes fréquences, dans une direction parallèle au plan de la surface. Cette disposition permet de dissocier la face du wafer utilisée pour intégrer les éléments...