Publicaciones

Affichage de 11131 à 11140 sur 16267


  • Article dans une revue

A batch-fabricated and electret-free silicon electrostatic vibration energy harvester

Philippe Basset, Dimitri Galayko, Ayyaz Mahmood Paracha, Frédéric Marty, Andrii Dudka, Tarik Bourouina

This paper presents a novel silicon-based and batch-processed MEMS electrostatic transducer for harvesting and converting the energy of vibrations into electrical energy without using an electret layer. Effective conversion from the mechanical-to-electric domains of 61 nW on a 60 M Omega resistive...

Journal of Micromechanics and Microengineering, 2009, 19 (11), pp.115025. ⟨10.1088/0960-1317/19/11/115025⟩. ⟨hal-00692939⟩

  • Autre publication scientifique

TOSCANE - optimised transmission of scalable video in terms of source/channel coding

L Carminati, As Bacquet, Christophe Deknudt, Patrick Corlay, Mohamed Gharbi, François-Xavier Coudoux, Marie Zwingelstein, Marc G. Gazalet, Y Berviller, H Rabah, M Guarisco, Sébastien J Weber, O Salem, A Senoussaoui, A Mehaoua

2009. ⟨hal-03983476⟩

  • Communication dans un congrès

Integrated health check of aeronautical structures by correlation of the ambient sound field : working actively passive sensors

Emmanuel Moulin, Jamal Assaad

International Symposium on Technological Innovation & Transport Systems, ITT'09, 2009, Paris, France. ⟨hal-00575759⟩

  • Communication dans un congrès

An organic-nanoparticle transistor behaving as a spiking synapse

F. Alibart, Christophe Novembre, David Guérin, Stéphane Pleutin, K. Lmimouni, Christian Gamrat, Dominique Vuillaume

4th International Meeting on Molecular Electronics, ElecMol'08, Dec 2008, Grenoble, France. ⟨hal-00361614⟩

  • Article dans une revue

Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/SiO2/Si structure

A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, V. Srot, F. Phillipp, P.A. van Aken, N. Breil, G. Larrieu, Emmanuel Dubois

The mechanisms of the platinum germanide formation by RTA processes in the Ge/Pt/Ge/SiO2/Si structure in the temperature range from 200 °C to 600 °C were investigated by means of transmission electron microscopy (TEM) techniques. The studies were focused on the observations of the layer...

Materials Science and Engineering: B, 2008, 154-155, pp.175-178. ⟨10.1016/j.mseb.2008.10.002⟩. ⟨hal-00356977⟩