Publicaciones

• Communication dans un congrès

Millimeter wave design with 65 nm LP SOI HR CMOS technology

B. Martineau, S. Douyere, A. Cathelin, Francois Danneville, C. Raynaud, Gilles Dambrine, Sylvie Lepilliet, F. Gianesello, D. Belot

IEEE International SOI Conference, 2007, United States. pp.123-124, ⟨10.1109/SOI.2007.4357883⟩. ⟨hal-00284028⟩

• Communication dans un congrès

Far field beam patterns of terahertz quantum cascade lasers

Wilfried Maineult, Stefano Barbieri, Alessio Andronico, Carlo Sirtori, Giuseppe Leo, Jean-Francois Lampin, Tahsin Akalin, Emilien Peytavit, Jesse Alton, Harvey E. Beere, David Ritchie

International Conference on Intersubband Transitions in Quantum Wells, ITQW07, Sep 2007, Cumbria, United Kingdom. pp.1-2. ⟨hal-00284101⟩

• Communication dans un congrès

QCL with terahertz TEM-horn antennas

Tahsin Akalin, Jean-Francois Lampin, Emilien Peytavit, Stefano Barbieri, Wilfried Maineult, Carlo Sirtori, Jesse Alton, Harvey E. Beere, David Ritchie

Quantum Cascade Lasers are one the most promising approach for the generation of THz waves and particularly in a double plasmon waveguide topology. Stripline resonators with a quasi-TEM mode are indeed interesting for THz-QCLs thanks to a high confinement factor combined with low losses. However...

Joint 32nd International Conference on Infrared and Millimeter Waves and 15th International Conference on Terahertz Electronics, IRMMW-THz2007, Sep 2007, Cardiff, United Kingdom. pp.474-475, ⟨10.1109/ICIMW.2007.4516588⟩. ⟨hal-00284102⟩

• Communication dans un congrès

Noise behavior of InP-based double-gate and standard HEMTs : a comparison

B.G. Vasallo, T. Gonzalez, D. Pardo, J. Mateos, Nicolas Wichmann, S. Bollaert, Yannick Roelens, A. Cappy

19th International Conference on Noise and Fluctuations, ICNF 2007, 2007, Japan. pp.167-170, ⟨10.1063/1.2759659⟩. ⟨hal-00284062⟩

• Communication dans un congrès

TEM-horn antennas for generation and detection of terahertz pulses

Jean-Francois Lampin, Emilien Peytavit, Tahsin Akalin, L. Desplanque, Gaël Mouret, Francis Hindle, Damien Bigourd

We have studied a new kind of terahertz antenna: transverse electromagnetic horn antennas (TEM-HA). These antennas have interesting characteristics for THz applications: large bandwidth, low reflection coefficient, good directivity and low dispersion. TEM-HA have been designed by simulation and...

Joint 32nd International Conference on Infrared and Millimeter Waves and 15th International Conference on Terahertz Electronics, IRMMW-THz 2007, Sep 2007, Cardiff, United Kingdom. pp.799-800, ⟨10.1109/ICIMW.2007.4516737⟩. ⟨hal-00284106⟩

• Article dans une revue

Embedded localization and communication system designed for intelligent guided transports

Yassin El Hillali, Atika Rivenq, C. Tatkeu, Jean-Michel Rouvaen, J.P. Ghys

EURASIP Journal on Embedded Systems, 2007, 2007, pp.79095-1-8. ⟨10.1155/2007/79095⟩. ⟨hal-00283517⟩

• Article dans une revue

AlGaN/GaN HEMTs on a (001)-oriented silicon substrate based on 100-nm SiN recessed gate technology for microwave power amplification

S. Boulay, S. Touati, A. Sar, Virginie Hoel, Christophe Gaquière, Jean-Claude de Jaeger, S. Joblot, Y. Cordier, F. Semond, J. Massies

IEEE Transactions on Electron Devices, 2007, 54, pp.2843-2848. ⟨10.1109/TED.2007.907189⟩. ⟨hal-00283493⟩

• Communication dans un congrès

Modeling in-vehicle wideband wireless channels using reverberation chamber theory

O. Delangre, S. van Roy, P. de Doncker, M. Lienard, Pierre Degauque

IEEE 66th Vehicular Technology Conference, VTC-2007 Fall, 2007, United States. pp.2149-2153, ⟨10.1109/VETECF.2007.451⟩. ⟨hal-00284440⟩

• Article dans une revue

Effect of growth temperature on defect states of GaNAsSb intrinsic layer in GaAs/GaNAsSb/GaAs photodiode for 1.3µm application

Satrio Wicaksono, Soon Fatt Yoon, Wan Khai Loke, Kianhuan Tan, Kim Luong Lew, Malek Zegaoui, Jean-Pierre Vilcot, Didier Decoster, Jean Chazelas

A GaAsSbN layer closely lattice matched to GaAs was used as an intrinsic layer (i layer) in a GaAsGaAsSbNGaAs p-i-n photodiode with response up to 1.3 μm. Deep level transient spectroscopy measurement on the GaAsGaAsSbNGaAs reveals two types of hole traps (HTs) in the GaAsSbN i layer; (i) HT1: a...

Journal of Applied Physics, 2007, 102 (4), pp.044505. ⟨10.1063/1.2769801⟩. ⟨hal-00283082⟩

• Article dans une revue

Low electron mobility of field-effect transistor determined by modulated magnetoresistance

R. Tauk, J. Lusakowski, W. Knap, A. Tiberj, Z. Bougrioua, M. Azize, P. Lorenzini, M. Sakowicz, K. Karpierz, C. Fenouillet-Beranger, M. Casse, C. Gallon, F. Boeuf, T. Skotnicki

Journal of Applied Physics, 2007, 102 (10), pp.103701.1. ⟨hal-00389540⟩