Publicaciones

• Communication dans un congrès

A novel zero-level packaging using BCB adhesive bonding and glass wet-etching for millimeter-wave applications

S. Seok, N. Rolland, P.A. Rolland

14th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers'07, 2007, France. pp.2099-2102, ⟨10.1109/SENSOR.2007.4300579⟩. ⟨hal-00284092⟩

• Article dans une revue

Transmission gaps and sharp resonant states in the electronic transport through a simple mesoscopic device

Housni Al-Wahsh, El Houssaine El Boudouti, Bahram Djafari-Rouhani, L. Dobrzynski, Abdellatif Akjouj

A simple electronic circuit consisting of a single symmetric or asymmetric loop with dangling resonators is designed to obtain possibly large stop bands (where the propagation of electrons is forbidden). Contrary to all known systems of this kind, a spectral transmission gap of nonzero width occurs...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75 (12), pp.125313. ⟨10.1103/PhysRevB.75.125313⟩. ⟨hal-00283159⟩

• Article dans une revue

Examination of operation of PZT-Film-Si-substrate structures as pyroactive memory elements

S.L. Bravina, N.V. Morozovsky, Denis Remiens, Caroline Soyer

Ferroelectrics, 2007, 353, pp.193-201. ⟨10.1080/00150190701368158⟩. ⟨hal-00285651⟩

• Communication dans un congrès

Investigation of wavelength GalnNAs 1300-1550 nm strained quantum wells on GaAs substrates

Abdelkader Aissat, Said Nacer, D. Berkani, Jean-Pierre Vilcot

1st WSEAS International Conference on Computational Chemistry, COMPUCHEM'07, Dec 2007, Cairo, Egypt. pp.115-119. ⟨hal-00362689⟩

• Article dans une revue

Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua, M. Laügt, P. Vennegues, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, M. Leroux

New conditions for one‐step ELO were implemented to grow coalesced (11equation image0) non‐polar and (11equation image2) semi‐polar GaN layers starting, respectively, from R ‐ and M ‐plane sapphire. A great part of the stacking faults (SFs) and dislocations are filtrated resulting in GaN material...

Physica Status Solidi A (applications and materials science), 2007, 204 (1), pp.282-289. ⟨10.1002/pssa.200673585⟩. ⟨hal-02906717⟩

• Communication dans un congrès

Réalisation de grille nitrure de longueur inférieure à 100nm pour des applications haute fréquence de HEMTs AlGaN/GaN

S. Boulay, Virginie Hoel, S. Touati, E. Delos, Christophe Gaquière, Jean-Claude de Jaeger, M.A. Poisson, S. Delage, Y. Cordier

15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.5C1-1-4. ⟨hal-00370327⟩

• Communication dans un congrès

Metallic source/drain architecture : status and prospects

Emmanuel Dubois, G. Larrieu, N. Breil, M. Ostling, P.E. Hellström, N. Reckinger, Xing Tang, S. Mantl

SINANO-ESSDERC Workshop, 2007, Munich, Germany. ⟨hal-00367349⟩

• Communication dans un congrès

Anticollision radar study and development

J. Zaidouni, Atika Rivenq, Smail Niar

Proceedings of the 2007 Forum on specification & Design Languages, FDL'07, 2007, Barcelona, Spain. ⟨hal-00367711⟩

• Communication dans un congrès

Breaking the AlGaN/GaN HEMT scaling limit with AlInN barriers

F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean, Christophe Gaquière, E. Kohn

Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2007, 2007, Venice, Italy. ⟨hal-00367695⟩

• Communication dans un congrès

Study and development of a compact low frequency acoustic sensor for vibratory analysis and characterisation of mechanical plates

Georges Nassar, B. Merheb, A. Skaf, Bertrand Nongaillard

Proceedings of the 2007 International Congress on Ultrasonics, ICU 2007, 2007, Vienna, Austria. ⟨hal-00367716⟩