Publicaciones

Affichage de 12681 à 12690 sur 16261


  • Communication dans un congrès

Convertisseur numérique analogique 1 bit à 7,8Gech/s pour émetteurs RF numériques en technologie CMOS 90nm

A. Flament, A. Frappé, B. Stefanelli, A. Kaiser, A. Cathelin

2006, pp.115-118. ⟨hal-00138681⟩

  • Communication dans un congrès

40 nm PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate

Emmanuel Dubois, G. Larrieu

7th Symposium Diagnostics & Yield Advanced Silicon Devices and Technologies for ULSI Era, 2006, Warsaw, Poland. ⟨hal-00138697⟩

  • Article dans une revue

Laser Doppler vibrometry for evaluating the piezoeletric coefficient d33 of thin film

R. Herdier, D. Jenkins, El Hadj Dogheche, Denis Remiens, M. Sulc

Review of Scientific Instruments, 2006, 77, pp.093905-1-5. ⟨hal-00138709⟩

  • Chapitre d'ouvrage

Fundamentals and theory

B. Demoulin

Ben Dhia S., Ramdani M., Sicard E. Electromagnetic compatibility of integrated circuits - Techniques for low emission and susceptibility, Springer US, pp.55-61, 2006. ⟨hal-00140359⟩

  • Communication dans un congrès

Digital microfluidics using EWOD and SAW actuation for biological applications

C. Druon

3rd Microfluidics French Conference, µFlu'06, 2006, Toulouse, France. ⟨hal-00140172⟩

  • Communication dans un congrès

Cross-talk coupling, a tool to characterize electromagnetic immunity of integrated circuits

S. Bazzoli, N. Ben Slimen, L. Kone, B. Demoulin

2006, pp.223-240. ⟨hal-00140183⟩

  • Article dans une revue

Multiexponential photoluminescence decay in indirect-gap semiconductor nanocrystals

Christophe Delerue, Guy Allan, Cécile Reynaud, Olivier Guillois, Gilles Ledoux, Friedrich Huisken

The origin of the multiexponential photoluminescence (PL) decay of Si quantum dots (QDs) has been debated for a long time. We present studies combining time-resolved PL experiments and tight binding calculations of phonon-assisted optical transitions showing that the distribution of lifetimes and...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.235318 1-4. ⟨10.1103/PhysRevB.73.235318⟩. ⟨hal-00092072⟩

  • Communication dans un congrès

The effects of self-assembled monolayers gate dielectrics treatment on pentacene thin film transistor characteristics

K. Lmimouni, R. Bianchini, S. Lenfant, David Troadec, D. Vuillaume

Indo-French workshop on molecular and organic devices, 2006, Lille, France. ⟨hal-00127157⟩

  • Communication dans un congrès

Molecular scale electronics in France

S. Lenfant, D. Vuillaume

Indo-French Chamber Commerce and Industry (IFCCI) and the Indo-French Technical Association (IFTA), 2006, Mumbai, India. ⟨hal-00127159⟩

  • Article dans une revue

Power measurement setup for large signal microwave characterization at 94 GHz

F Medjdoub, S. Vandenbrouck, Christophe Gaquière, E. Delos, M. Zaknoune, D. Theron

IEEE Electron Device Letters, 2006, 16, pp.218-220. ⟨hal-00127945⟩