Publicaciones

• Article dans une revue

Fabrication and characterization of 1.1 GHz blade nanoelectromechanical resonator

Vincent Agache, Bernard Legrand, Dominique Collard, Lionel Buchaillot, Hiroyuki Fujita

An electromechanical resonator based on a blade geometry is proposed in this letter. This particular geometry allows self-alignment of the mechanical resonator structure to its lateral electrodes while achieving high eigenfrequencies in the GHz range. This letter reports both the fabrication...

Applied Physics Letters, 2005, 86, pp.213104-1-3. ⟨10.1063/1.1929873⟩. ⟨hal-00125633⟩

• Article dans une revue

Comparison between carried-induced optical index, loss variations and carrier lifetime in GalnAsP/InP heterostructures for 1.55 μm DOS application

Malek Zegaoui, Didier Decoster, Joseph Harari, Jean-Pierre Vilcot, F. Mollot, V. Magnin, Jean Chazelas

Experimentally carrier-induced optical index, propagation excess loss and carrier lifetime variations against injected current in n +-InP/i- InGaAsP/i-InP/p +-InP heterostructures are investigated. The heterostructures have quaternary bandgap composition of λ g = 1.18 and 1.30 urn, and they were...

Electronics Letters, 2005, 41 (10), pp.613-614. ⟨10.1049/el:20050770⟩. ⟨hal-00125658⟩

• Communication dans un congrès

Tensile stress determination in silicon nitride membrane by AFM characterization

A.S. Rollier, Bernard Legrand, D. Deresmes, M. Lagouge, D. Collard, L. Buchaillot

2005, pp.828-831. ⟨hal-00125660⟩

• Communication dans un congrès

Metamorphic growth of InAs/InAlAs heterostructures on InP(001) substrates

X. Wallart, J. Lastennet, F. Mollot

13th European Molecular Beam Epitaxy Workshop, Euro-MBE, 2005, Grindelwald, Switzerland. ⟨hal-00125392⟩

• Communication dans un congrès

A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s photoreceiver

G. Wolf, H. Happy, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, Gilles Dambrine

2005, pp.27-29. ⟨hal-00125306⟩

• Communication dans un congrès

Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

R. Rengel, J. Mateos, T. Gonzales, D. Pardo, Gilles Dambrine, Francois Danneville, M.J. Martin

2005, pp.497-502. ⟨hal-00125307⟩

• Communication dans un congrès

Noise in SOI MOSFETs and gate-all-around transistors

B. Iniguez, A. Lazaro, H.A. Hamid, G. Pailloncy, Gilles Dambrine, Francois Danneville

18th International Conference on Noise and Fluctuations, ICNF 2005, 2005, Salamanca, Spain. ⟨hal-00125321⟩

• Article dans une revue

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

M. Werquin, Christophe Gaquière, Y. Guhel, N. Vellas, D. Theron, B. Boudart, Virginie Hoel, Marie Germain, Jean-Claude de Jaeger, S. Delage

The benefit of high drain-source bias voltages of GaN devices on sapphire substrates for high linearity applications is demonstrated. Whatever the output power densities considered, the corresponding intermodulation ratio is at least 20 dB better than usual PHEMT devices on GaAs substrates for the...

Electronics Letters, 2005, 41 (1), ⟨10.1049/el:20056735⟩. ⟨hal-01646906⟩

• Communication dans un congrès

High mobility InAs/AlInAs metamorphic heterostructures on InP (001)

X. Wallart, J. Lastennet, F. Mollot

2005, pp.94-97. ⟨hal-00125391⟩

• Article dans une revue

As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system

S. Dhellemmes, S. Godey, A. Wilk, X. Wallart, F. Mollot

Journal of Crystal Growth, 2005, 278, pp.564-568. ⟨hal-00125361⟩