Publicaciones
Affichage de 13831 à 13840 sur 16258
Analysis of hot carrier aging degradation in GaN MESFETs
R. Pierobon, F. Rampazzo, D. Pacetta, Christophe Gaquière, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni
2004, pp.143-146. ⟨hal-00141969⟩
Detection of gold colloid adsorption at a solid/liquid interface using micromachined piezoelectric resonators
M. Guirardel, Liviu Nicu, Daisuke Saya, Y. Tauran, Eric Cattan, Denis Remiens, C. Bergaud
Japanese Journal of Applied Physics, part 2 : Letters, 2004, 43, pp.L111-L114. ⟨hal-00141179⟩
Physical analysis of the breakdown phenomenon between single or double step gate recess HEMTs
M. Elkhou, Michel Rousseau, H. Gerard, Jean-Claude de Jaeger
2004, pp.571-574. ⟨hal-00142307⟩
3 bit 90° phase shifter using microfluidic technology
L. Le Cloirec, A. Benlarbi-Delai, Bertrand Bocquet
34th European Microwave Conference, Oct 2004, Amsterdam, Netherlands. pp.1161-1164. ⟨hal-00142282⟩
Performance improvement of DS-CDMA on the LOS multipath 60 GHz channel using block turbo coding
A. Goalic, W. Sawaya, R. Okouyi, Laurent Clavier
2004, pp.133-136. ⟨hal-00142300⟩
Transposition of a base band UWB impulse radio signal at 60 GHz for high data rate multiple access indoor communication systems
N. Deparis, Christophe Loyez, M. Fryziel, N. Rolland, P. Rolland
2004, pp.253-256. ⟨hal-00142278⟩
Quasi-particle gap, dielectric properties and electronic correlations in semiconductor nanostructures
Christophe Delerue, Michel Lannoo, Guy Allan
Workshop on Theory and Modeling of Electronic Excitations in Nanoscience, NANOEXC2004, 2004, Acquafredda di Maratea, Italy. ⟨hal-00141287⟩
Evolution of the density of states from a two- to a zero-dimensional semiconductor
Zeger Hens, B. Grandidier, D. Deresmes, Guy Allan, Christophe Delerue, Didier Stiévenard, Daniel Vanmaekelbergh
EPL - Europhysics Letters, 2004, 65, pp.809-815. ⟨10.1209/epl/i2003-10130-3⟩. ⟨hal-00141246⟩
Two-photon absorption in InP substrates in the 1.55 µm range
D. Vignaud, Jean-Francois Lampin, F. Mollot
2004, pp.134-137. ⟨hal-00140715⟩
Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy
A. Wilk, M. Zaknoune, S. Godey, S. Dhellemmes, P. Gérard, C. Chaix, F. Mollot
Journal of Vacuum Science and Technology, 2004, 22 (3), pp.1444-1449. ⟨10.1116/1.1738665⟩. ⟨hal-00162756⟩