Publicaciones

Affichage de 14121 à 14130 sur 16258


  • Communication dans un congrès

Systems conception and adaptative calibration technique for S-parameters measurement at 35 GHz

Kamel Haddadi, M. Maazi, D. Glay, T. Lasri

2004, pp.Session 4A. ⟨hal-00142280⟩

  • Communication dans un congrès

Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement

Jean-Claude Jacquet, Raphaël Aubry, H. Gerard, E. Delos, Nathalie Rolland, Yvon Cordier, A. Bussutil, Michel Rousseau, Sylvain Laurent Delage

GaN and its related alloys constitute a family of wide bandgap semiconductors suitable to optoelectronics and power microwave applications. For the latter applications, their high breakdown fields in the 3MV/cm range and their high peak electron velocity above 107cm/s are crucial. The high electron...

12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238. ⟨hal-00142308⟩

  • Communication dans un congrès

Amélioration des performances des HEMTs AlGaN/GaN sur substrat Si

A. Minko, Virginie Hoel, Christophe Gaquière, D. Theron, Jean-Claude de Jaeger, Y. Cordier, F. Semond, F. Natali, J. Massies, H. Lareche, L. Wedzikowski, R. Langer, P. Bove

GDR Grand Gap, 2004, Fréjus, France. ⟨hal-00141966⟩

  • Communication dans un congrès

Nonlinear noise modeling in FETs for the design of low noise active mixers

Francois Danneville

IEEE MTT-S International Microwave Symposium, Workshop on System-Level Measurement, Modelling, and Design Issues of Mixers, 2004, Fort Worth, TX, United States. ⟨hal-00133911⟩

  • Communication dans un congrès

Noise modeling and performance of SOI MOSFETs

Francois Danneville, G. Pailloncy, B. Iniguez, J.P. Raskin, Gilles Dambrine

IEEE MTT-S International Microwave Symposium, Workshop on High Frequency Noise in Advanced Silicon-based Devices : From Basics to State-of-the-Art Device and Circuit Performances, 2004, Fort Worth, TX, United States. ⟨hal-00133912⟩

  • Communication dans un congrès

Thermal de-embedding procedure for cryogenic on-wafer high frequency noise measurement

S. Delcourt, Gilles Dambrine, Nour Eddine Bourzgui, Francois Danneville, C. Laporte, J.P. Fraysse, M. Maignan

2004, pp.414-421. ⟨hal-00133897⟩

  • Communication dans un congrès

Modélisation de bruit et performances de MOSFETs SOI totalement désertés

G. Pailloncy, B. Iniguez, Gilles Dambrine, M. Dehan, J.P. Raskin, H. Matsuhashi, P. Delatte, Francois Danneville

Workshop Action Spécifique Bruit, 2004, La Grande Motte, France. ⟨hal-00133915⟩

  • Article dans une revue

Two-photon absorption in InP substrates in the 1.55 µm range

D. Vignaud, Jean-Francois Lampin, F. Mollot

Applied Physics Letters, 2004, 85, pp.239. ⟨hal-00018568⟩

  • Communication dans un congrès

Advanced and nanometric MOSFET architecture, multiple gate devices and Pi gates

J. Penaud, F. Fruleux, Emmanuel Dubois, G. Larrieu

MIGAS International Summer School on Advanced Microelectronics, MIGAS'04, 2004, Autrans, France. ⟨hal-00140995⟩