Publicaciones

Affichage de 14561 à 14570 sur 16261


  • Communication dans un congrès

Caractérisation non destructive d'objets enfouis par des techniques microondes

Latifa Achrait-Furlan, T. Lasri, Ahmed Mamouni

Actes de TELECOM 03 et 3èmes Journées Franco-Maghrébines des Microondes et leurs Applications, JFMMA 2003, 2003, Marrakech, Maroc. ⟨hal-00146027⟩

  • Communication dans un congrès

3D indoor micro location using a stereoscopic microwave phase sensitive device

A. Benlarbi-Delai, J.C. Cousin

2003, pp.623-626. ⟨hal-00146043⟩

  • Communication dans un congrès

Metamaterial based transmission lines in fineline technology

T. Decoopman, O. Vanbésien, D. Lippens

Proceedings of the 2003 International Student Seminar on Microwave Applications of Novel Physical Phenomena, 2003, Espoo, Finland. ⟨hal-00146101⟩

  • Communication dans un congrès

Monte Carlo simulation of electron transport in quantum cascade lasers

Olivier Bonno, Jean-Luc Thobel, François Dessenne

Proceedings of the 14th Workshop on Modelling and Simulation of Electron Devices, 2003, Barcelona, Spain. ⟨hal-00146104⟩

  • Communication dans un congrès

A novel approach using picosecond ultrasonics at variable laser-wavelength for the characterization of AlN films used for microsystem applications

Arnaud Devos, G. Caruyer, C. Zinck, P. Ancey

2003, pp.793-796. ⟨hal-00144891⟩

  • Communication dans un congrès

On the response of a limited chain of welded spherical beads

Anne-Christine Hladky, Arnaud Devos, M. de Billy

2003, pp.1205-1208. ⟨hal-00144888⟩

  • Article dans une revue

Very low Schottky barrier to n-type silicon with PtEr-stack silicide

Xing Tang, J. Katcki, Emmanuel Dubois, N. Reckinger, J. Ratajczak, G. Larrieu, P. Loumaye, O. Nisole, V. Bayot

We investigate Er silicide formed on n-type silicon. In order to protect the Er from oxidation during the formation of Er silicide in non-UHV conditions, a Pt layer is deposed successively on top of Er layer. Surprisingly, we observe that Pt remains essentially unaffected in the formation of Er...

Solid-State Electronics, 2003, 47 (11), pp.2105-2111. ⟨10.1016/S0038-1101(03)00256-9⟩. ⟨hal-00146401⟩