Publicaciones
Affichage de 14691 à 14700 sur 16261
Why do (2x4) GaAs and InAs (001) surfaces exposed to phosphorus have so different strain behavior ?
Xavier Wallart, Catherine Priester, D. Deresmes, Thomas Gehin, Francis Mollot
Applied Physics Letters, 2002, 81, pp.1060-1062. ⟨hal-00018491⟩
Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density
D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot
Applied Physics Letters, 2002, 80, pp.4151. ⟨hal-00018489⟩
Controlled charge injection in semiconductor nanoparticles
Thierry Melin, D. Deresmes, D. Stievenard
Proceedings of the 2002 Materials Research Society Fall Meeting, 2002, Boston, MA, United States. ⟨hal-00149956⟩
Systèmes dédiés de télécommunication pour les transports terrestres
M. Heddebaut
2002. ⟨hal-00149881⟩
Cristaux photoniques pour l'optique intégrée : extraction dans les structures guide d'onde multiport
S. Fasquel, O. Vanbésien, X. Melique, D. Lippens
9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, St Aygulf, France. ⟨hal-00148653⟩
Assessment of broadband ultrasonic attenuation measurements in inhomogeneous media
M. Goueygou, Bogdan Piwakowski, S. Ould Naffa, F. Buyle-Bodin
Ultrasonics, 2002, 40, pp.77-82. ⟨hal-00148668⟩
Nonlinear distortion analysis of Ka band MMIC's under single tone, two tone and NPR excitations
Christophe Gaquière, D. Ducatteau, P. Delemotte, Y. Crosnier, S. Tranchant, B. Carnez
2002, pp.229-231. ⟨hal-00149712⟩
Etude des contacts ohmiques et Schottky sur nitrure de gallium pour composants à effets de champ
Christophe Gaquière, Raphaël Aubry, Yannick Guhel, A. Minko, Nicolas Vellas, Matthieu Werquin, B. Boudart, Simone Cassette, Yvon Cordier, Sylvain Laurent Delage, E. Delos, Jean-Claude de Jaeger, Damien Ducatteau, H. Gerard
GDR Semiconducteurs à large bande interdite, 2002, Montpellier, France. ⟨hal-00149717⟩
Load impedance influence of the IDD(VDS) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz
Nicolas Vellas, Christophe Gaquière, Frédéric Bue-Erkmen, Yannick Guhel, B. Boudart, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger
IEEE Electron Device Letters, 2002, 23, pp.246-249. ⟨hal-00149699⟩