Publicaciones

• Communication dans un congrès

Measurement of ultrasonic attenuation and Rayleigh wave dispersion for testing concrete with subsurface damage

M. Goueygou, S. Ould Naffa, Bogdan Piwakowski, A. Fnine, F. Buyle-Bodin

IEEE International Ultrasonics Symposium, 2002, Germany. pp.1/861-864, ⟨10.1109/ULTSYM.2002.1193533⟩. ⟨hal-00250219⟩

• Article dans une revue

Ineslastic electron tunnelling spectroscopy : capabilities and limitations in metal-oxide-semiconductor devices

G. Salace, C. Petit, D. Vuillaume

Journal of Applied Physics, 2002, 91, pp.5896-5901. ⟨hal-00148712⟩

• Autre publication scientifique

Conception et réalisation d'un séparateur acousto-optique de polarisation

A. Sakkour

2002. ⟨hal-00162705⟩

• Article dans une revue

From nanoelectronics to nanotechnology

Emmanuel Dubois

Belgian Journal of Electronics & Communications HF, 2002, 3, pp.9-16. ⟨hal-00250387⟩

• Communication dans un congrès

On the physical interest of some numerical methods for wave phase conjugation in active media

A. Merlen, Vladimir Preobrazhensky, Philippe Pernod

2002, pp.208. ⟨hal-00148692⟩

• Communication dans un congrès

High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz

N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs

2002, 4 pp. ⟨hal-00149700⟩

• Communication dans un congrès

Analyse physique des HEMTs à base de nitrure de gallium

M. Elkhou, Michel Rousseau, Jean-Claude de Jaeger

GDR Semiconducteurs à large bande interdite, 2002, Montpellier, France. ⟨hal-00149718⟩

• Article dans une revue

High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz

Nicolas Vellas, Christophe Gaquière, Yannick Guhel, Matthieu Werquin, Frédéric Bue-Erkmen, Sylvain Laurent Delage, B. Boudart, Fabrice Semond, Jean-Claude de Jaeger

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high...

IEEE Electron Device Letters, 2002, 23 (8), pp.461-463. ⟨10.1109/LED.2002.801328⟩. ⟨hal-00149698⟩

• Article dans une revue

Détection d'obstacles devant les véhicules de transports guidés. Utilisation d'un radar coopératif et d'un stéréoscope optique

L. Khoudour, S. Ambellouis, C. Vieren, P. Deloof

Instrumentation, Mesure, Métrologie, 2002, 2, pp.81-116. ⟨hal-00149879⟩

• Communication dans un congrès

Inversion of V(z) responses for determination Cij elastic constants by using an optimization method on the singularities of the reflection coefficient

Youssef Benmehrez, Michael Lematre, G. Bourse, Wei-Jiang Xu, Mohamed Ourak

The measurement of the V(z) curve, also called acoustical material signature has been used to determine cij elastic constants. The method is based on the comparison of measured and calculated R(θ,f) reflection coefficient. The measured R(θ,f) is determined by inversion of the V(z) curve. The cij...

QUANTITATIVE NONDESTRUCTIVE EVALUATION, Jul 2001, Brunswick, United States. pp.1353-1360, ⟨10.1063/1.1472952⟩. ⟨hal-00149914⟩