Publicaciones

• Autre publication scientifique

Composants Schottky à hétérostructures de semiconducteurs en technologie InP pour le mélange de fréquences à 560 GHz

Florence Podevin

2001. ⟨hal-00152059⟩

• Communication dans un congrès

Determination of surface elastic constants of CVD diamond sheet by laser ultrasonics

M. Qian, W.X. Hu, Wei-Jiang Xu, Frédéric Jenot, Mohamed Ourak

2001, pp.1383-1388. ⟨hal-00157809⟩

• Article dans une revue

High-speed evanescently coupled PIN photodiodes for hybridisation on silicon platform optimised with genetic algorithm

L. Giraudet, Joseph Harari, V. Magnin, P. Pagnod, E. Boucherez, J. Decobert, J. Bonnet-Gamerd, D. Carpentier, C. Jany, F. Blache, Didier Decoster

Electronics Letters, 2001, 37, pp.973-975. ⟨hal-00152492⟩

• Communication dans un congrès

60 GHz 420 mW/mm low gate current GaInAs/InP composite channel HEMT on InP substrate

Mustafa Boudrissa, Elisabet Delos, X. Wallart, Didier Theron, Jean-Claude de Jaeger

XXV Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2001, May 2001, Cagliari, Sardinia, Italy. ⟨hal-00152631⟩

• Communication dans un congrès

Du matériau au composant : le modulateur électro-optique à ondes progressives

Didier Decoster, J.F. Larchanche, B. Bellini

Réunion finale CTI Polymères, 2001, Cachan, France. ⟨hal-00152541⟩

• Communication dans un congrès

High performance AlGaN/GaN HEMTs on a resistive silicon substrate

Virginie Hoel, Y. Guhel, N. Vellas, Christophe Gaquière, Jean-Claude de Jaeger, Y. Cordier, F. Semond, F. Natali, J. Massies

11th European Heterostrucrure Technology Workshop, HETECH 01, 2001, Padova, Italy. ⟨hal-00152670⟩

• Communication dans un congrès

ECR-silicon nitride passivation of III-V transistors

S. Shapoval, V. Gurtovoi, A. Kovalchuk, Christophe Gaquière

XXV Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2001, 2001, Cagliari, Sardinia, Italy. ⟨hal-00152674⟩

• Article dans une revue

Detection of picosecond electrical pulses using the intrinsic Franz-Keldysh effect

Jean-Francois Lampin, L. Desplanque, F. Mollot

We report time-resolved measurements of ultrafast electrical pulses propagating on a coplanar transmission line using the intrinsic Franz-Keldysh effect. A low-temperature-grown GaAs layer deposited on a GaAs substrate allows generation and also detection of ps pulses via electroabsorption sampling...

Applied Physics Letters, 2001, 78 (26), pp.4103-4105. ⟨10.1063/1.1381030⟩. ⟨hal-00018479⟩

• Communication dans un congrès

Design and realization of sub-100nm gate length HEMTs

T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy

2001, pp.626-629. ⟨hal-00151761⟩

• Article dans une revue

HEMTs capability for millimeter wave applications

S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, A. Cappy

Annals of Telecommunications - annales des télécommunications, 2001, 56, pp.15-26. ⟨hal-00151764⟩