Publicaciones

• Article dans une revue

New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Flavien Cozette, Bilal Hassan, Christophe Rodriguez, Eric Frayssinet, Rémi Comyn, François Lecourt, Nicolas Defrance, Nathalie Labat, François Boone, Ali Soltani, Abdelatif Jaouad, Yvon Cordier, Hassan Maher

This paper reports on the fabrication of an enhancement-mode AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistor with a new barrier epi-layer design based on double Al 0.2 Ga 0.8 N barrier layers separated by a thin GaN layer. Normally-off transistors are achieved with good...

Semiconductor Science and Technology, 2021, 36 (3), pp.034002. ⟨10.1088/1361-6641/abd489⟩. ⟨hal-03341284⟩

• Communication dans un congrès

20 Gbit/s 306 GHz link enabled by Yagi-Uda antenna

Guillaume Ducournau, Fabio Pavanello, Aritrio Bandyopadhyay, Cybelle Belem-Gonçalves, Frédéric Gianesello, Cyril Luxey, Emilien Peytavit, Jean-Francois Lampin, Malek Zegaoui, Mohammed Zaknoune

We report on the use of a Yagi-Uda antenna on polymer substrate used in a 306 GHz-20 Gbit/s real-time data link for indoor applications. The Yagi-Uda antenna is described and the validation of the THz link is obtained in amplitude modulation mode and using QAM-16 signals (32 Gbit/s).

2021 URSI GASS Conference, Session D08: Integrated Terahertz Electronic and Photonic Devices and Systems (Part 2), Aug 2021, Rome, Italy. pp.939-942. ⟨hal-03413356⟩

• Article dans une revue

Piezoresistance in defect-engineered silicon

Heng Li, Abel Thayil, Chris Lew, Marcel Filoche, Brett Johnson, Jeff Mccallum, S. Arscott, Alistair C. H. Rowe

The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage (Vt) corresponding to the onset of a space-charge-limited hole current...

Physical Review Applied, 2021, 15 (1), 014046, 9 p. ⟨10.1103/PhysRevApplied.15.014046⟩. ⟨hal-03003310⟩

• Article dans une revue

Mm-wave through-load element for on-wafer measurement applications

Marc Margalef-Rovira, Olivier Occello, Abdelhalim Saadi, Vanessa Avramovic, Sylvie Lepilliet, Loïc Vincent, Manuel J. Barragan, Emmanuel Pistono, Sylvain Bourdel, Christophe Gaquière, Philippe Ferrari

This paper presents an innovative Through-Load element aimed at characterization applications at mm-wave frequencies. The proposed structure can behave as a Through connection or as a 50-Ω load depending on a DC control voltage. Among other potential applications, this system can be used to...

IEEE Transactions on Circuits and Systems I: Regular Papers, 2021, 68 (8), pp.3170-3183. ⟨10.1109/TCSI.2021.3072097⟩. ⟨hal-03202213⟩

• Article dans une revue

Design and Full Characterization of a 3-D-Printed Hyperbolic Pyramidal Wideband Microwave Absorber

Xhoandri Lleshi, Thi Quynh van Hoang, Brigitte Loiseaux, Didier Lippens

A fully 3-D-printed wideband metamaterial absorber, characterized by an absorptivity above 0.95 in the X and Ku-bands and with a fractional bandwidth of 0.71, is presented in this letter. A 250 mm × 250 mm sample, with a total thickness of 6.3 mm (0.26λ 0 ), is fabricated exploiting the fused...

IEEE Antennas and Wireless Propagation Letters, 2021, 20 (1), pp.28-32. ⟨10.1109/LAWP.2020.3037718⟩. ⟨hal-03545040⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 10/3]

Raffaele Pisano

2021. ⟨hal-04510951⟩

• Article dans une revue

Oxygen vacancy engineering of TaO$_x$-based resistive memories by Zr doping for improved variability and synaptic behavior

João Palhares, Yann Beilliard, F. Alibart, Everton Bonturim, Daniel de Florio, Fabio Fonseca, Dominique Drouin, Andre Ferlauto

Resistive switching (RS) devices are promising forms of non-volatile memory. However, one of the biggest challenges for RS memory applications is the device-to-device (D2D) variability, which is related to the intrinsic stochastic formation and configuration of oxygen vacancy (V$_O$) conductive...

Nanotechnology, 2021, 32 (40), pp.405202. ⟨10.1088/1361-6528/ac0e67⟩. ⟨hal-03539056⟩

• Article dans une revue

A new equivalent circuit scheme for grounded back-to-back GCPW-MS-GCPW transitions fabricated on a thin low-k substrate

Pierre-Vincent Dugué, Mohammed El Gibari, Mathieu Halbwax, Stephane Ginestar, Vanessa Avramovic, Jean-Pierre Vilcot, Hong Wu Li

We hereby present a new equivalent circuit model including both lumped and distributed elements for GCPW-MS transitions (GCPW for Grounded CoplanarWaveguide and MS for Microstrip). In order to validate the modelling results, such transitions have been fabricated on a 20 μm-thick BCB (...

Progress In Electromagnetics Research Letters, 2021, 95, pp.33-42. ⟨10.2528/PIERL20093003⟩. ⟨hal-03054270⟩

• Communication dans un congrès

Evolution of localized surface plasmon resonance made of gold nanowire chain embedded in WS2multilayers

Z. Oumekloul, Y. Achaoui, A. Mir, Abdellatif Akjouj

Recently, the transition metal dichalcogenides (TMDs) have emerged as a new class of building blocks for engineering enhanced plasmonic sensors. This class of materials can be made with a low production cost and can be easily hybridized with metallic nanoparticles whereby desired molecules are...

4th International Conference on Materials and Environmental Science, ICMES 2020, Nov 2020, Oujda, Morocco. pp.7507-7510, ⟨10.1016/j.matpr.2021.02.259⟩. ⟨hal-03362269⟩

• Communication dans un congrès

Single-pole-double-throw RF switches based on monolayer MoS₂

Myungsoo Kim, Emiliano Pallecchi, Henri Happy, Deji Akinwande

Recently, low-power analog switches have been enjoying rapidly growing interest owing to their proliferation in mobile and reconfigurable communication and connectivity systems often with multiple-input-multiple-output architecture [1] , [2] . To develop this ideal switch, non-volatile switches...