Publicaciones
Affichage de 8221 à 8230 sur 16278
In-line dynamic acoustic behavior of a viscoelastic complex media : dough application
Georges Nassar, Bertrand Nongaillard, J. Cheio
Open Acoustics Journal, 2012, 5, pp.39-45. ⟨10.2174/1874837601205010039⟩. ⟨hal-00788343⟩
Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS
M. Gassoumi, B. Grimbert, Christophe Gaquière, H. Maaref
Semiconductors, 2012, 46, pp.382-385. ⟨10.1134/S1063782612030104⟩. ⟨hal-00788194⟩
Mechanism of ohmic Cr/Ni/Au contact formation on p-GaN
L. Magdenko, G. Patriarche, David Troadec, O. Mauguin, E. Morvan, M.A. Di Forte-Poisson, K. Pantzas, A. Ougazzaden, A. Martinez, A. Ramdane
Journal of Vacuum Science and Technology, 2012, 30, pp.022205-1-5. ⟨10.1116/1.3688486⟩. ⟨hal-00788195⟩
[Review] Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs
F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J.L. Trolet, M. Piccione, V. Sbrugnera, B. Grimbert, Christophe Gaquière
Solid-State Electronics, 2012, 72, pp.15-21. ⟨10.1016/j.sse.2011.12.002⟩. ⟨hal-00788193⟩
Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires
Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau
Large signal microwave performances of high-k metal gate 28 nm CMOS technology
R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, D. Gloria, Christophe Gaquière
Electronics Letters, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩. ⟨hal-00788176⟩
The multi-port technology for microwave sensing applications
Kamel Haddadi, T. Lasri
60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6258266⟩. ⟨hal-00802597⟩
Causality and phase sheet ambiguity in ultrasonic spectrometry
Pierre Campistron, Dorothée Debavelaere-Callens
6th International Symposium on Signal, Image, Video and Communications, ISIVC 2012, 2012, Valenciennes, France. paper ID 74, 259-262. ⟨hal-00802638⟩
Anomaly and defects characterization by IDS(VDS) and drain-current DLTS of Al0.25Ga0.75N/GaN/SiC HEMT's
S. Saadaoui, M.M. Ben Salem, Christophe Gaquière, H. Maaref
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801156⟩
Fabrication of La2Ti2O7 nanostructures by focused Ga3+ ion beam and characterization by piezoresponse force microscopy
G. Declercq, A. Ferri, Z. Shao, A. Bayart, S. Saitzek, R. Desfeux, D. Deresmes, David Troadec, J. Costecalde, Denis Remiens
Joint 21th International Symposium on Applications of Ferroelectrics, ISAF 2012, 11st European Conference on the Applications of Polar Dielectrics, ECAPD 2012, 4th International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in P, 2012, Aveiro, Portugal. pp.1-3, ⟨10.1109/ISAF.2012.6297772⟩. ⟨hal-00801125⟩