Publicaciones

• Communication dans un congrès

A 1kPixel CMOS camera chip for 25fps real-time terahertz imaging applications

H. Sherry, J. Grzyb, Y. Zhao, R. Al Hadi, A. Cathelin, A. Kaiser, U. Pfeiffer

IEEE International Solid-State Circuits Conference, ISSCC 2012, 2012, San Francisco, CA, United States. pp.252-254, ⟨10.1109/ISSCC.2012.6176997⟩. ⟨hal-00801095⟩

• Communication dans un congrès

State of the art 200 GHz power measurements on SiGe:C HBT using an innovative load pull measurement setup

A. Pottrain, T. Lacave, D. Gloria, P. Chevalier, Christophe Gaquière

60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6259409⟩. ⟨hal-00801191⟩

• Communication dans un congrès

[Invited] New generation of flexible GHz graphene transistor

H. Happy, C. Sire, F. Ardiaca, Sylvie Lepilliet, J.W.T. Seo, M.C. Hersam, Gilles Dambrine, Vincent Derycke

19th International Display Workshops joint with Asia Display 2012, IDW/AD'12, 2012, Kyoto, Japan. pp.139-140. ⟨hal-00801045⟩

• Communication dans un congrès

Characterization on AlGaN/GaN/Si HEMTs devices passivated with SiN/SiO2

H. Mosbahi, M. Gassoumi, M.A. Zaidi, Vanessa Avramovic, Christophe Gaquière, B. Grimbert, H. Maaref

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801155⟩

• Communication dans un congrès

160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management

Stéphane Piotrowicz, Olivier Jardel, Jean-Claude Jacquet, D. Lancereau, Raphaël Aubry, Erwan Morvan, Nicolas Sarazin, Jérémy Dufraisse, Charu Dua, Mourad Oualli, Eric Chartier, Marie-Antoinette Di Forte-Poisson, Christophe Gaquière, Sylvain Laurent Delage

We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power...

34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, Oct 2012, La Jolla, CA, United States. pp.1-4, ⟨10.1109/CSICS.2012.6340059⟩. ⟨hal-00801142⟩

• Communication dans un congrès

Time-domain semiconductor structure simulation based on 2D/3D coupled electromagnetism/transport modeling

Christophe Dalle

Advanced Electromagnetics Symposium, AES 2012, 2012, Paris, France. pp.116-120. ⟨hal-00802589⟩

• Communication dans un congrès

Specular path estimation errors with ESPRIT, SAGE, and RiMAX in the presence of dense multipath

E. Tanghe, L. Martens, W. Joseph, D.P. Gaillot, M. Lienard, Pierre Degauque

2nd IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications, IEEE APWC'12, 2012, Cape Town, South Africa. pp.315-316, ⟨10.1109/APWC.2012.6324917⟩. ⟨hal-00802575⟩

• Communication dans un congrès

Exact calculation of the union bound for the performance of cooperative distributed turbo codes over Rayleigh fading channels

H. Ben Chikha, Iyad Dayoub

6th International Symposium on Signal, Image, Video and Communications, ISIVC 2012, 2012, Valenciennes, France. paper ID 37, 151-154. ⟨hal-00802520⟩

• Communication dans un congrès

An optimized pilots position method for V2X synchronization

A. Sassi, F. Charfi, L. Kamoun, Yassin El Hillali, Atika Rivenq

6th International Symposium on Signal, Image, Video and Communications, ISIVC 2012, 2012, Valenciennes, France. paper ID 43, 171-175. ⟨hal-00802522⟩

• Communication dans un congrès

An adaptive video pre-processor based on just-noticeable distortion

E. Vidal, T. Hauser, Patrick Corlay, François-Xavier Coudoux

6th International Symposium on Signal, Image, Video and Communications, ISIVC 2012, 2012, Valenciennes, France. paper ID 53, 200-203. ⟨hal-00802524⟩