Publicaciones

• Communication dans un congrès

A 60 GHz transceiver for low power ad hoc networks

Christophe Loyez, N. Rolland, Michael Bocquet

IEEE International Conference on Green Computing and Communications, GreenCom 2012, Workshop on Energy and Wireless Sensors, e-WiSe 2012, 2012, Besançon, France. pp.session 2 : Power Management, 671-674, ⟨10.1109/GreenCom.2012.108⟩. ⟨hal-00811708⟩

• Communication dans un congrès

A 10GBits/s 2.1pJ/bit OOK demodulator at 60GHz for wireless chip-to-chip communication

S. Foulon, S. Pruvost, Christophe Loyez, N. Rolland, Vanessa Avramovic

IEEE Radio and Wireless Symposium, RWS 2012, 2012, Santa Clara, CA, United States. pp.291-294, ⟨10.1109/RWS.2012.6175320⟩. ⟨hal-00801068⟩

• Article dans une revue

Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires

Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an sp3d5s* tight-binding model for electrons and a valence...

• Communication dans un congrès

CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: auditory (cochlea) and visual (retina) cognitive processing applications

M. Suri, O. Bichler, D. Querlioz, G. Palma, E. Vianello, D. Vuillaume, C. Gamrat, B. de Salvo

In this work, we demonstrate an original methodology to use Conductive-Bridge RAM (CBRAM) devices as binary synapses in low-power stochastic neuromorphic systems. A new circuit architecture, programming strategy and probabilistic STDP learning rule are proposed. We show, for the first time, how the...

IEEE International Electron Devices Meeting, Dec 2012, San Francisco, CA, United States. ⟨10.1109/IEDM.2012.6479017⟩. ⟨hal-00803088⟩

• Article dans une revue

Tight-binding calculations of the optical properties of HgTe nanocrystals

Guy Allan, Christophe Delerue

We propose a tight-binding model of HgTe which gives an accurate band structure in a wide energy range compared to recent ab initio calculations. The inverted band structure near the Fermi level and its temperature dependence are also very well described. Using this parametrization, we study the...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (16), pp.165437. ⟨10.1103/PhysRevB.86.165437⟩. ⟨hal-00787874⟩

• Article dans une revue

Experimental evidence of zero-angle refraction and acoustic wave-phase control in a two-dimensional solid/solid phononic crystal

Jerome O. Vasseur, B. Morvan, A. Tinel, N. Swinteck, Anne-Christine Hladky, P.A. Deymier

The square symmetry of the equifrequency contour of longitudinal waves in a solid/solid two-dimensional phononic crystal (PC) is shown through numerical calculations and experiments to lead to peculiar propagation phenomena. A slab of steel/epoxy PC immersed in water refracts incident longitudinal...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (13), pp.134305. ⟨10.1103/PhysRevB.86.134305⟩. ⟨hal-00786894⟩

• Article dans une revue

Supercritical dynamics of magnetoelastic wave triad in a solid

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, Olivier Bou Matar, V. Berzhansky

Physics of Wave Phenomena, 2012, 20, pp.256-263. ⟨10.3103/S1541308X12040036⟩. ⟨hal-00787360⟩

• Article dans une revue

Polymer-based zero-level packaging technology for high frequency RF applications by wafer bonding/debonding technique using an anti-adhesion layer

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

International Journal of Precision Engineering and Manufacturing, 2012, 13, pp.1861-1867. ⟨10.1007/s12541-012-0244-7⟩. ⟨hal-00786960⟩

• Article dans une revue

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

N. Ketteniss, H. Behmenburg, F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, H. Kalisch, A. Vescan

Semiconductor Science and Technology, 2012, 27, pp.035009-1-4. ⟨10.1088/0268-1242/27/3/035009⟩. ⟨hal-00788167⟩

• Article dans une revue

High power density performances of SiGe HBT from BiCMOS technology at W-band

A. Pottrain, T. Lacave, D. Ducatteau, D. Gloria, P. Chevalier, Christophe Gaquière

IEEE Electron Device Letters, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩. ⟨hal-00788168⟩