Publicaciones

• Article dans une revue

Bilayer Cr/Au contacts on n-GaN

L. Dobos, L. Toth, B. Pecz, Z.J. Horvath, Z.E. Horvath, A.L. Toth, B. Beaumont, Z. Bougrioua

Vacuum, 2012, 86, pp.769-772. ⟨10.1016/j.vacuum.2011.07.027⟩. ⟨hal-00790436⟩

• Article dans une revue

Synthesis and electrical properties of sputtered (Na0.5Bi0.5)TiO3 thin films on silicon substrate

S. Quignon, Caroline Soyer, Denis Remiens

Journal of the American Ceramic Society, 2012, 95, pp.3180-3184. ⟨10.1111/j.1551-2916.2012.05285.x⟩. ⟨hal-00788338⟩

• Article dans une revue

Inhibiting proteins biofouling using graphene oxide in droplet-based microfluidic microsystems

G. Perry, V. Thomy, M.R. Das, Yannick Coffinier, Rabah Boukherroub

Lab on a Chip, 2012, 12, pp.1601-1604. ⟨10.1039/C2LC21279J⟩. ⟨hal-00788304⟩

• Communication dans un congrès

Patterning process and actuation in open air of micro-beam actuator based on conducting IPNs

Alexandre Khaldi, Cedric Plesse, Caroline Soyer, Claude Chevrot, Dominique Teyssie, Frederic Vidal, Eric Cattan

SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, 2012, San Diego, United States. ⟨10.1117/12.915086⟩. ⟨hal-01829117⟩

• Article dans une revue

A 10-MHz GaN HEMT DC/DC boost converter for power amplifier applications

F. Gamand, M.D. Li, Christophe Gaquière

IEEE Transactions on Circuits and Systems I: Regular Papers, 2012, 59, pp.776-779. ⟨10.1109/TCSII.2012.2228397⟩. ⟨hal-00787876⟩

• Article dans une revue

Ricean K-factor and SNR estimation for M-PSK modulated signals using the fourth-order cross-moments matrix

I. Bousnina, M.B. Ben Salah, A. Samet, Iyad Dayoub

IEEE Communications Letters, 2012, 16, pp.1236-1239. ⟨10.1109/LCOMM.2012.061912.120708⟩. ⟨hal-00788185⟩

• Thèse

Contribution au développement de microcomposants pour la caractérisation ultrasonore en canal microfluidique sur silicium : modélisation de la propagation, Development of microcomponents for ultrasonic characterization in silicon based microchannel : propagation modeling

Assane Ndieguene

Les recherches menées pour le développement des microsystèmes ont permis d’améliorer considérablement la miniaturisation de certaines fonctions. Ces travaux, très multidisciplinaires, ont conduit à de nombreuses applications dans les domaines des télécommunications, de la chimie et de la biologie...., The research activities for the development of microsystems enabled the downsizing of many functions. These multidisciplinary works concerns many applications in the fields of telecommunications, chemistry, and biology. In that context, our work concerned the conception and analyses of acoustical...

Micro et nanotechnologies/Microélectronique. Université de Valenciennes et du Hainaut-Cambrésis, 2011. Français. ⟨NNT : 2011VALE0033⟩. ⟨tel-03416217⟩

• Article dans une revue

Level repulsion and evanescent waves in sonic crystals

V. Romero-Garcia, Jerome O. Vasseur, Anne-Christine Hladky, Lluis Miquel Garcia-Raffi, J.V. Sanchez-Perez

This work theoretically and experimentally reports the evanescent connections between propagating bands in periodic acoustic materials. The complex band structures obtained by solving for the k(ω) problem reveal a complete interpretation of the propagation properties of these systems. The...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84, pp.212302-1-4. ⟨10.1103/PhysRevB.84.212302⟩. ⟨hal-00783380⟩

• Communication dans un congrès

The transverse electromagnetic horn antenna as an efficient THz pulse emitter

Jean-Francois Lampin, Emilien Peytavit, Tahsin Akalin, Guillaume Ducournau, Jens Klier, Sabine Wohnsiedler, Joachim Jonuscheit, René Beigang

We have fabricated a new photoconductive antenna based on a transverse electromagnetic horn and low temperature grown GaAs. It has been tested with a time-domain terahertz setup. The horn was used as the emitter and a standard dipole photoconductive antenna was used as the receiver. The spectrum...

International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper Tu3D.2, 1-2, ⟨10.1109/irmmw-THz.2011.6105067⟩. ⟨hal-00800486⟩

• Communication dans un congrès

A 300 GHz InP/GaAsSb/InP HBT for high data rate applications

Maher, Hassan, Vincent Delmouly, U. Rouchy, Michel Renvoisé, Peter Frijlink, Derek Smith, M. Zaknoune, Damien Ducatteau, Vanessa Avramovic, André Scavennec, Jean Godin, Muriel Riet, Cristell Maneux, Bertrand Ardouin

In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25nm and a collector layer of 130nm. The emitter width of the transistor is 0.35μm and the base contact is...

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Dec 2011, Berlin, Germany. pp.Art n°68. ⟨hal-00671674⟩