Publicaciones

Affichage de 9011 à 9020 sur 16278


  • Communication dans un congrès

Nanowires and nanocones for new nanostructured materials

D. Hourlier, P. Perrot

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591389⟩

  • Communication dans un congrès

120nm AlSb/InAs HEMTs

Yannick Roelens, A. Olivier, A. Noudeviwa, L. Desplanque, Francois Danneville, Nicolas Wichmann, X. Wallart, S. Bollaert

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, session A1, papier 185, 1-4. ⟨hal-00591362⟩

  • Article dans une revue

Design, realization and test of a 2.1 GHz ultra-low phase noise oscillator based on BAW resonator

M.D. Li, S. Seok, N. Rolland, P.A. Rolland

AEU. International Journal of Electronics and Communications, 2011, 65, pp.602-607. ⟨10.1016/j.aeue.2010.09.004⟩. ⟨hal-00591316⟩

  • Communication dans un congrès

Growth of self-catalyzed GaAs nanowire arrays on Si(111) using a VLS mechanism

S.R. Plissard, G. Larrieu, K.A. Dick, X. Wallart, P. Caroff

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591395⟩

  • Communication dans un congrès

Atom probe investigation of silicon nanowires grown by VLS and IPSLS

W. M. Chen, P. Pareige, B. Grandidier, D. Stievenard, Lianbo Yu, Pere Roca I Cabarrocas

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591402⟩

  • Article dans une revue

Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride

S. Galambosi, L. Wirtz, J.A. Soininen, J. Serrano, A. Marini, K. Watanabe, T. Taniguchi, S. Huotari, A. Rubio, K. Hamalainen

The anisotropy of the valence energy-loss function of hexagonal boron nitride (hBN) is shown to be largely enhanced by the highly inhomogeneous character of the excitonic states. The energy loss with momentum transfer parallel to the BN layers is dominated by strongly bound, quasi-two-dimensional...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (8), pp.081413. ⟨10.1103/PhysRevB.83.081413⟩. ⟨hal-00579067⟩

  • Communication dans un congrès

Fabrication et caractérisation de MOSFET In0.53Ga0.47As de type N en technologie auto-aligné et de longueur de grille de 300nm

J. Mo, A. Olivier, Nicolas Wichmann, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, F. Martin, O. Desplats, S. Bollaert

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 122, 2C3, 1-4. ⟨hal-00597145⟩

  • Communication dans un congrès

Systèmes radiofréquences avancés pour communication inter-puces multi-gigabits à 60GHz

S. Foulon, Christophe Loyez, S. Pruvost, N. Rolland

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 274, 2E8, 1-3. ⟨hal-00597147⟩

  • Article dans une revue

Germanium adsorption and initial growth on SrTiO3 (001) surface : a first principles investigation

J.J. Wang, I. Lefebvre

Journal of Physical Chemistry C, 2011, 115, pp.22893-22900. ⟨10.1021/jp205074w⟩. ⟨hal-00783408⟩

  • Article dans une revue

Electrical characterization of traps in AlGaN/GaN FAT-HEMT's on silicon substrate by C-V and DLTS measurements

M. Charfeddine, M. Gassoumi, H. Mosbahi, Christophe Gaquière, M.A. Zaidi, H. Maaref

Journal of Modern Physics, 2011, 2, pp.1229-1234. ⟨10.4236/jmp.2011.210152⟩. ⟨hal-00783410⟩