Publicaciones

• Article dans une revue

Growth rate model and doping metrology by atom probe tomography in silicon nanowire

W.H. Chen, R. Larde, E. Cadel, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, P. Pareige

Silicon nanowires (SiNWs) with different surface number density are fabricated using Chemical Vapor Deposition (CVD) method by controlling the catalyst droplet number density with in-situ evaporation. For comparison, another type of SiNWs is fabricated by Molecular Beam Epitaxy (MBE) method. To...

Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8, pp.771-774. ⟨10.1002/pssc.201000233⟩. ⟨hal-00597124⟩

• Article dans une revue

Asymmetry of polarization reversal and current-voltage characteristics of Pt/PZT-Film/Pt:Ti/SiO2/Si-substrate structures

S.L. Bravina, N.V. Morozovsky, J. Costecalde, Caroline Soyer, Denis Remiens, D. Deresmes

The characterization of the asymmetries of bipolar charge-voltage and current-voltage loops of polarization reversal and unipolar current-voltage curves for Pt/PZT-film/Pt:Ti/SiO2/Si-substrate systems was performed in the dynamic mode. The asymmetry of local deformation-voltage loops was observed...

Smart Materials Research, 2011, 2011, pp.374915. ⟨10.1155/2011/374915⟩. ⟨hal-00783492⟩

• Communication dans un congrès

Coulomb energy determination of a single Si dangling bond

T.H. Nguyen, G. Mahieu, Maxime Berthe, B. Grandidier, C. Delerue, D. Stievenard, P. Ebert

Herodot Summer School, 2011, Cargese, France. ⟨hal-00807579⟩

• Communication dans un congrès

Accurate multibias equivalent-circuit extraction for AlGaN/GaN/Si HEMTs passivated SiO2/Si3N4

H. Mosbahi, M. Gassoumi, M.A. Zaidi, Christophe Gaquière, B. Grimbert, H. Maaref

European Materials Research Society Fall Meeting, E-MRS Fall 2011, Symposium H : Novel materials for electronics, optoelectronics, photovoltaics and energy saving applications, 2011, Warsaw, Poland. ⟨hal-00807603⟩

• Communication dans un congrès

Impact of gate length on pulsed IV characteristics of passivated InAlN/GaN HFETs

M. Heuken, A. Vescan, F. Lecourt, H. Behmenburg, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, H. Kalisch, N. Ketteniss

9th International Conference on Nitride Semiconductors, ICNS-9, 2011, Glasgow, United Kingdom. ⟨hal-00807610⟩

• Communication dans un congrès

[Invited] On chiral skyrmions in ferroelectrics

Laurent Baudry, Igor A. Luk'Yanchuk, Anaïs Sené

12th European Meeting on Ferroelectricity, EMF 2011, 2011, Bordeaux, France. ⟨hal-00807619⟩

• Communication dans un congrès

Réfraction négative des ondes longitudinales dans un cristal phononique élastique

Anne-Christine Hladky, Charles Croënne, Jerome O. Vasseur, Bertrand Dubus, B. Morvan

Colloque National Métamatériaux, CNM 2011, 2011, Orsay, France. ⟨hal-00807121⟩

• Communication dans un congrès

Droplet based lab-on-chip microfluidic microsystems for high sensitive mass spectrometry analysis

F. Lapierre, G. Piret, G. Perry, V. Thomy, Yannick Coffinier, Rabah Boukherroub

5th International Workshop on Surface Modification for Chemical and Biochemical Sensing, SMCBS'2011, 2011, Lochow, Poland. ⟨hal-00807637⟩

• Communication dans un congrès

Formation and evolution of exotic polarization textures in nanoferroelectrics

Laurent Baudry, Igor A. Luk'Yanchuk, Anaïs Sené

International Symposium on Integrated Functionalities, ISIF 2011, 2011, Cambridge, England, United Kingdom. ⟨hal-00807624⟩

• Communication dans un congrès

Innovative electrical sensors for highly toxic gases based on carbon nanotubes and silicon nanowires

J.P. Simonato, A. Carella, S. Clavaguera, M. Delalande, S. Lenfant, D. Vuillaume, V. Passi, Emmanuel Dubois

Materials Research Society Fall Meeting, MRS Fall 2011, Symposium BB : Semiconductor nanowires for photovoltaics, 2011, Boston, MA, United States. ⟨hal-00807191⟩