Publicaciones

• Autre publication scientifique

Étude ab initio des phonons du graphène sur substrats métalliques

Adrien Allard

2011. ⟨hal-00799436⟩

• Autre publication scientifique

Diagnostic ultrasonore de la dégradation mécanique et structurale du béton

Pawel Safinowski

2011. ⟨hal-00799478⟩

• Communication dans un congrès

Graphene nanoribbon field effect transistor for high frequency applications

H. Happy, N. Meng, R. Fleurier, E. Pichonat, D. Vignaud, Gilles Dambrine

41st European Microwave Conference, EuMC 2011, 2011, Manchester, United Kingdom. pp.1138-1141. ⟨hal-00799695⟩

• Chapitre d'ouvrage

Modélisation des systèmes biologiques, bioinformatique

Olivier Gascuel, P. Benas, C. Brun, D. Burnouf, Alexandre de Brevern, A. Denise, Nicolas Destainville, Bertrand Dubus, L. Duret, B. Genest, J. Ledoux, O. Martin, I. Mihalcescu, L. Nicolas, Benoît Perthame, Nadine Peyriéras, J. Salamero, F. Schoentgen, M.C. Slomianny

Rapport de conjoncture 2010 du Comité national de la recherche scientifique, CNRS Editions, chapitre 43, 845-858, 2011, 978-2-271-07263-4. ⟨hal-00799641⟩

• Communication dans un congrès

Recent advances in the negative refraction of longitudinal waves in an elastic phononic crystal

Anne-Christine Hladky, Charles Croënne, K.R. Olympio, Jerome O. Vasseur, Bertrand Dubus, B. Morvan

IEEE International Ultrasonics Symposium, IUS 2011, 2011, Orlando, FL, United States. pp.1316-1319, ⟨10.1109/ULTSYM.2011.0325⟩. ⟨hal-00799671⟩

• Autre publication scientifique

Compensation numérique des non-linéarités des amplificateurs de puissance avec estimation des paramètres au niveau récepteur

Jan Zeleny

2011. ⟨hal-00799414⟩

• Article dans une revue

Characterization of AlGaN/GaN high electron mobility transistor grown on silicon carbide devices with a gate length Lg = 0.15 µm

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, W. Chikhaoui, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2178-2181. ⟨10.1166/sl.2011.1788⟩. ⟨hal-00795894⟩

• Article dans une revue

Coplanar liquid crystal reconfigurable phase-shifters

Fehim Sahbani, Nicolas Tentillier, Christian Legrand, Karine Blary, A. Gharsallah, A. Gharbi

A coplanar liquid crystal phase-shifter is presented and characterized in the frequency range of 5–40 GHz. The interest of this structure lies in the technological realization which is very simple. The phase-shift variation is of 0.2°/cm/GHz for an attenuation of 2.5 dB/cm at 40 GHz. These...

Molecular Crystals and Liquid Crystals, 2011, Issue 1: Proceedings of the 23rd International Liquid Crystal Conference (ILCC 2010) Part III of VIII Submit an article, 542, pp.204-212. ⟨10.1080/15421406.2011.570587⟩. ⟨hal-00795916⟩

• Article dans une revue

Identification and localization of electronic traps in AlGaN/GaN HEMTs on Al2O3 substrates using CDLTS

O. Fathallah, M. Gassoumi, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2380-2383. ⟨10.1166/sl.2011.1786⟩. ⟨hal-00795919⟩

• Article dans une revue

Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayer thickness

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

Using transmission electron microscopy we investigate the influence of AlSb monolayers and substrate surface preparation on the microstructure of GaSb grown on GaAs (001) by molecular beam epitaxy. The geometric phase analysis method is used to analyze the interface dislocation type and the...

Journal of Applied Physics, 2011, 109, pp.023509-1-6. ⟨10.1063/1.3532053⟩. ⟨hal-00572649⟩