Publicaciones

• Article dans une revue

Control of III-V nanowire crystal structure by growth parameter tuning [Invited]

Kimberly A. Dick, Philippe Caroff, Jessica Bolinsson, Maria E. Messing, Jonas Johansson, Knut Deppert, L.R. Wallenberg, Lars Samuelson

In this work we investigate the variation of the crystal structure of gold-seeded III–V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III–V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All...

Semiconductor Science and Technology, 2010, 25 (2), pp.024009-1-11. ⟨10.1088/0268-1242/25/2/024009⟩. ⟨hal-00548699⟩

• Communication dans un congrès

100mV noise performances of Te-doped Sb-HEMT

A. Noudeviwa, A. Olivier, Yannick Roelens, Francois Danneville, Nicolas Wichmann, N. Waldhoff, L. Desplanque, X. Wallart, S. Bollaert

8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.25-28, ⟨10.1109/ASDAM.2010.5667012⟩. ⟨hal-00549922⟩

• Communication dans un congrès

Continuous wave terahertz photomixer from low temperature grown GaAs with high carrier mobility

H. Tanoto, Q.Y. Wu, J.H. Teng, M. Sun, Z.N. Chen, T. Htoo, S.J. Chua, Jean-Francois Lampin, A. Gokarna, El Hadj Dogheche

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, 2010, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612417⟩. ⟨hal-00549948⟩

• Communication dans un congrès

Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics

Yannick Roelens, A. Olivier, L. Desplanque, A. Noudeviwa, Francois Danneville, Nicolas Wichmann, X. Wallart, S. Bollaert

68th Device Research Conference, DRC 2010, 2010, United States. pp.53-54, ⟨10.1109/DRC.2010.5551945⟩. ⟨hal-00549924⟩

• Communication dans un congrès

Development of a functional model for the nanoparticle-organic memory transistor

O. Bichler, W. Zhao, G. Gamrat, F. Alibart, S. Pleutin, D. Vuillaume

IEEE International Symposium on Circuits and Systems, ISCAS 2010, 2010, France. pp.1663-1666, ⟨10.1109/ISCAS.2010.5537487⟩. ⟨hal-00549960⟩

• Communication dans un congrès

Sputtered indium tin oxide thin films deposited on glass substrate for photovoltaic application

L. Kerkache, A. Layadi, F. Hadjersi, El Hadj Dogheche, A. Gokarna, A. Stolz, Mathieu Halbwax, Jean-Pierre Vilcot, Didier Decoster, Basma El Zein, S.S. Habib

International Conference on Renewable Energies and Power Quality, ICREPQ'10, 2010, France. pp.1-3. ⟨hal-00549979⟩

• Article dans une revue

Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate

N. Defrance, Y. Douvry, Virginie Hoel, J.C. Gerbedoen, A. Soltani, Michel Rousseau, Jean-Claude de Jaeger, R. Langer, H. Lahreche

Electronics Letters, 2010, 46, pp.949-950. ⟨10.1049/el.2010.0431⟩. ⟨hal-00549463⟩

• Article dans une revue

Sensitivity of plasmonic nanostructures coated with thin oxide films for refractive index sensing : experimental and theoretical investigations

E. Galopin, J. Niedziolka-Jonsson, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, A. Noual, Rabah Boukherroub, Sabine Szunerits

Journal of Physical Chemistry C, 2010, 114, pp.11769-11775. ⟨10.1021/jp1023839⟩. ⟨hal-00549439⟩

• Article dans une revue

AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz

N. Sarazin, E. Morvan, M.A. Di Forte Poisson, M. Oualli, Christophe Gaquière, O. Jardel, O. Drisse, M. Tordjman, M. Magis, S.L. Delage

IEEE Electron Device Letters, 2010, 31, pp.11-13. ⟨10.1109/LED.2009.2035145⟩. ⟨hal-00549451⟩

• Article dans une revue

Towards the 3-D Microfabrication and Integration of a Complete Power Unit Used for Energy Autonomous Wireless System

Tristan Pichonat, C. Lethien, D. Hourlier-Bahloul, Nicolas Tiercelin, David Troadec, Paul Alain Rolland

This paper deals with the fabrication of an all-solid lithium-ion microbattery for autonomous wireless sensors networks nodes, focusing especially on the solid electrolyte and the negative electrode made of silicon nanowires. Regarding the electrolyte, amorphous thin solid films of lithium...

ECS Transactions, 2010, 25 (35), pp.11 - 21. ⟨10.1149/1.3414000⟩. ⟨hal-03192890⟩