Publicaciones

Affichage de 9831 à 9840 sur 16273


  • Article dans une revue

On the physical origin of conical bubble structure under an ultrasonic horn

Bertrand Dubus, C. Vanhille, C. Campos-Pozuelo, C. Granger

Ultrasonics Sonochemistry, 2010, 17, pp.810-818. ⟨10.1016/j.ultsonch.2010.03.003⟩. ⟨hal-00548559⟩

  • Article dans une revue

Injection-locking of terahertz quantum cascade lasers up to 35 GHz using RF amplitude modulation

P. Gellie, S. Barbieri, Jean-Francois Lampin, P. Filloux, C. Manquest, C. Sirtori, I. Sagnes, S.P. Khanna, E.H. Linfield, A.G. Davies, H. Beere, D. Ritchie

Optics Express, 2010, 18, pp.20799-20813. ⟨10.1364/OE.18.020799⟩. ⟨hal-00548733⟩

  • Article dans une revue

New magnetic micro-actuator design based on PDMS elastomer and MEMS technologies for tactile display

J. Streque, Abdelkrim Talbi, Philippe Pernod, Vladimir Preobrazhensky

IEEE Transactions on Haptics (ToH), 2010, 3, pp.88-97. ⟨10.1109/TOH.2009.61⟩. ⟨hal-00548961⟩

  • Article dans une revue

Coulomb energy determination of a single Si dangling bond

T.H. Nguyen, G. Mahieu, Maxime Berthe, B. Grandidier, C. Delerue, D. Stievenard, P. Ebert

Physical Review Letters, 2010, 105, pp.226404-1-4. ⟨10.1103/PhysRevLett.105.226404⟩. ⟨hal-00549059⟩

  • Article dans une revue

Wavelength and beam launching effects on silica optical fiber in local area networks

H. Mrabet, Iyad Dayoub, R. Attia, W. Hamouda

Optics Communications, 2010, 283, pp.4234-4241. ⟨10.1016/j.optcom.2010.06.034⟩. ⟨hal-00549472⟩

  • Article dans une revue

Synchronization sensitivity of block-IFDMA systems

E.P. Simon, D.P. Gaillot, Virginie Degardin

IEEE Transactions on Wireless Communications, 2010, 9, pp.256-267. ⟨10.1109/TWC.2010.01.090173⟩. ⟨hal-00549481⟩

  • Article dans une revue

Enhancement of biosensing performance in a droplet-based bioreactor by in situ microstreaming

O. Ducloux, E. Galopin, Farzam Zoueshtiagh, A. Merlen, V. Thomy

Biomicrofluidics, 2010, 4, pp.011102-1-5. ⟨10.1063/1.3310930⟩. ⟨hal-00549490⟩

  • Article dans une revue

AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen, A. Soltani, S. Joblot, Jean-Claude de Jaeger, Christophe Gaquière, Y. Cordier, F. Semond

IEEE Transactions on Electron Devices, 2010, 57, pp.1497-1503. ⟨10.1109/TED.2010.2048792⟩. ⟨hal-00549455⟩