Publicaciones

Affichage de 10001 à 10010 sur 16545


  • Communication dans un congrès

Achievement and perspective of GaN technology for microwave applications

Sylvain Laurent Delage, Erwan Morvan, Nicolas Sarazin, Raphaël Aubry, Eric Chartier, Olivier Jardel, Marie-Antoinette Di Forte-Poisson, Christian Dua, Jean-Claude Jacquet, Stéphane Piotrowicz, Anna Piotrowska, Eliana Kaminska, Jean-Claude de Jaeger, Christophe Gaquière, Ulrich Heinlen, Ehrard Kohn, Mohammed Alomari, David Maier, Ján Kuzmík, Dionyz Pogany

This paper give an overview of some recent results obtained by Alcatel-Thales III-V Lab using emerging AlGaN/GaN HEMT technology. This technology is very suitable up to Ku-Band and offer impressive power performances. The second part of the presentation will give an overview of results obtained...

18th International Conference on Microwave, Radar and Wireless Communications, MIKON-2010, Jun 2010, Vilnius, Lithuania. pp.314-318. ⟨hal-00800875⟩

  • Article dans une revue

Silicon wafer characterisation by laser ultrasonics and neural networks

F. Lefevre, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Journal of Physics: Conference Series, 2010, 214, pp.012042 -1-5. ⟨10.1088/1742-6596/214/1/012042⟩. ⟨hal-00549913⟩

  • Article dans une revue

Fabrication of 24-MHz-disk resonators with silicon passive integration technology

M. Sworowski, F. Neuilly, Bernard Legrand, A. Summanwar, P. Philippe, L. Buchaillot

IEEE Electron Device Letters, 2010, 31, pp.23-25. ⟨10.1109/LED.2009.2034542⟩. ⟨hal-00548984⟩

  • Article dans une revue

Negative refraction of surface acoustic waves in the subgigahertz range

Bernard Bonello, Laurent Belliard, Juliette Pierre, Jerome O. Vasseur, Bernard Perrin, Olga Boyko-Kazymyrenko

We used the picosecond ultrasonic technique to experimentally demonstrate the negative refraction of surface acoustic waves in a two-dimensional phononic crystal. The sample is made of a square lattice of circular voids drilled at the surface of a thick silica substrate. The lattice parameter is of...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.104109-1-5. ⟨10.1103/PhysRevB.82.104109⟩. ⟨hal-00549435⟩

  • Article dans une revue

Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

O. Fathallah, M. Gassoumi, B. Grimbert, Christophe Gaquière, H. Maaref

European Physical Journal: Applied Physics, 2010, 51, pp.10304-1-5. ⟨10.1051/epjap/2010085⟩. ⟨hal-00549476⟩

  • Communication dans un congrès

Vers la caractérisation cellulaire par BioMEMS THz

Simon Laurette, A. Treizebre, Nour Eddine Bourzgui, Bertrand Bocquet

13èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2010, Jan 2010, Paris, France. CD-ROM, Session MEMS Lab-on-chip, 1-4. ⟨hal-00573235⟩

  • Article dans une revue

Interface engineering for improved light transmittance through photonic crystal flat lenses

Geoffroy Scherrer, Maxence Hofman, Wojciech Smigaj, B. Gralak, X. Melique, O. Vanbesien, D. Lippens, Colette Dumas, Benoît Cluzel, F. de Fornel

In this paper, we present photonic crystal flat lenses with interfaces engineered to improve the light transmittance thanks to a broad angles impedance matching. The interface engineering consists in the realization of antireflection gratings on the edges of the lenses which are designed to reduce...

Applied Physics Letters, 2010, 97 (7), pp.071119. ⟨10.1063/1.3473760⟩. ⟨hal-00548691⟩

  • Communication dans un congrès

Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructures for high speed and low power consumption electronic devices

L. Desplanque, D. Vignaud, S. Godey, S.R. Plissard, E. Cadio, X. Wallart, P. Liu, H. Sellier

16th International Conference on Molecular Beam Epitaxy, MBE 2010, 2010, Berlin, Germany. ⟨hal-00573659⟩

  • Article dans une revue

Growth and electric properties of MPB BiScO3-PbTiO3 thin films on La0.7Sr0.3MnO3-coated silicon substrates

S.A. Zhang, X.L. Dong, Y. Chen, F. Cao, Y.Y. Zhang, G.S. Wang, N. Sama, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.1583-1585. ⟨10.1111/j.1551-2916.2010.03630.x⟩. ⟨hal-00549506⟩