Publicaciones

• Article dans une revue

Sagittal acoustic waves in finite solid-fluid superlattices: band-gap structure, surface and confined modes, and omnidirectional reflection and selective transmission

Y. El Hassouani, E.H. El Boudouti, Bahram Djafari-Rouhani, H. Aynaou

Using a Green’s function method, we present a comprehensive theoretical analysis of the propagation of sagittal acoustic waves in superlattices (SLs) made of alternating elastic solid and ideal fluid layers. This structure may exhibit very narrow pass bands separated by large stop bands. In...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78, pp.174306-1-23. ⟨10.1103/PhysRevB.78.174306⟩. ⟨hal-00357386⟩

• Communication dans un congrès

Acoustical properties characterization of a composite made of SU-8 and nanoparticules for BioMEMS application

Julien Carlier, Pierre Campistron, Dorothée Debavelaere-Callens, Caroline Soyer, Bertrand Nongaillard, S. Wang, X. Zhao

The photoresist SU‐8 (often used in microtechnology) has been acoustically characterized at the frequency of 1 GHz thanks to ZnO transducers. This material will be used to achieve acoustical matching between silicon and water at this frequency and a gain of about 5 dB has been obtained using the...

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, Paris, France. pp.4979-4983, ⟨10.1121/1.2934923⟩. ⟨hal-00361158⟩

• Communication dans un congrès

Design of III-nitride multi-layer structures for optical and surface acoustic wave interaction

Samuel Dupont, Jean-Claude Kastelik, V. Zhang, F. Causa, Q. Meng, J. Sarma

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, Paris, France. ⟨hal-00362062⟩

• Article dans une revue

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, Adam Laszcz, J. Ratajcak, Thomas Skotnicki

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction...

IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩

• Communication dans un congrès

Molecular dynamics simulation of the recrystallization of disordered Si layers

E. Lampin, Christophe Krzeminski

Workshop SiMaDes-II, Atomic scale simulations and experimental studies of disordered systems, 2008, Grenoble, France. ⟨hal-00361542⟩

• Ouvrages

Scienze e Religioni. Il ruolo delle scienze naturali, ipotesi di studio e prospettive (Sciences and Religions. The role of natural sciences, study hypotheses and perspectives)

Rafel Pascual, Raffaele Pisano

• Article dans une revue

Comparative Sb and As segregation at the InP on GaAsSb interface

X. Wallart, S. Godey, Y. Douvry, L. Desplanque

Applied Physics Letters, 2008, 93, pp.123119-1-3. ⟨10.1063/1.2991299⟩. ⟨hal-00356947⟩

• Article dans une revue

Molecular-scale electronics

D. Vuillaume

Comptes Rendus. Physique, 2008, 9, pp.78-94. ⟨10.1016/j.crhy.2007.10.014⟩. ⟨hal-00357286⟩

• Article dans une revue

Passive photonic components using InP optical wire technology

Marie Lesecq, Sophie Maricot, Jean-Pierre Vilcot, Maxime Beaugeois

The authors present the design, fabrication and characterisation of passive photonic components using InP optical wire technology. These components are straight and curved waveguides as well as Y-junctions. Their ultimate use is to be integrated within active nanophotonic functions and this is...

IET Optoelectronics, 2008, 2, pp.69-75. ⟨10.1049/iet-opt:20060104⟩. ⟨hal-00357302⟩

• Article dans une revue

Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current-voltage characteristics

A.K. Chauhan, D.K. Aswal, S.P. Koiry, S.K. Gupta, J.V. Yakhmi, C. Sürgers, David Guérin, S. Lenfant, D. Vuillaume

Applied physics. A, Materials science & processing, 2008, 90, pp.581-589. ⟨10.1007/s00339-007-4336-7⟩. ⟨hal-00357287⟩