Publicaciones

• Communication dans un congrès

Transition de phase et propriétés diélectriques de films de Ba(0.3)Sr(0.7)TiO3 déposés sur Al2O3 avec une couche tampon de TiO2

Areski Ghalem, Freddy Ponchel, Denis Remiens, Tuami Lasri

Dans cet article, nous proposons l'étude des propriétés diélectriques ainsi que l'évolution de la transition de phase des films de Ba(0.3)Sr(0.7)TiO3 déposés par pulvérisation cathodique sur un substrat de saphir muni d'une couche tampon de TiO2 afin de contrôler l'orientation...

13èmes Journées de Caractérisation Microondes et Matériaux, JCMM2014, 2014, Nantes, France. article 29, 4 p. ⟨hal-01006431⟩

• Communication dans un congrès

Caractérisation non linéaire de films minces de (Pb,Sr)TiO3

Freddy Ponchel, Ludovic Burgnies, Damien Ducatteau, Eric Lheurette, Denis Remiens, Didier Lippens

Ce travail traite de la caractérisation diélectrique haute fréquence, en petit et en grand signal, de films minces ferroélectriques déposées sur silicium haute résistivité. Quel que soit le régime de fonctionnement la structure utilisée est un guide d'onde coplanaire sans discontinuité avec...

13èmes Journées de Caractérisation Microondes et Matériaux, JCMM2014, 2014, Nantes, France. article 14, 4 p. ⟨hal-01006425⟩

• Communication dans un congrès

Narrow linewidth generation at 1 THz using cascaded Brillouin fiber lasers and quasi-optic UTC-PD

Guillaume Ducournau, Denis Bacquet, P. Szriftgiser, Fabio Pavanello, Emilien Peytavit, Mohammed Zaknoune, Alexandre Beck, Jean-Francois Lampin

Narrow linewidth THz generation using a cascaded Brillouin fibre laser structure and a unitraveling carrier photodiode is proposed. Using two distributed feedback lasers separated by > 1 THz with 1 MHz initial linewidth, the linewidth of the realized THz source is found to be < 100 Hz at 1014...

39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Sep 2014, Tucson, United States. ⟨10.1109/IRMMW-THz.2014.6956153⟩. ⟨hal-03286169⟩

• Communication dans un congrès

Impact of spacing between array elements on the performances of diversity schemes in tunnels

M. Lienard, Jose-Maria Molina-Garcia-Pardo, C. Sanchis-Borras, Pierre Degauque

To increase channel capacity in tunnels, MIMO seems to be a promising technique despite the low angular spread of the rays. Indeed, for transmitting frequencies on the order or larger than 1 GHz, the tunnel behaves as an oversized waveguide and the concept of spatial diversity can be replaced by...

18th International Conference on Circuits, Systems, Communications and Computers, CSCC 2014, 2014, Santorini Island, Greece. pp.30-33. ⟨hal-01055044⟩

• Communication dans un congrès

Experimental investigation of the characteristics of the electromagnetic reverberation in the UWB bands

Aliou Bamba, Wout Joseph, Emmeric Tanghe, Luc Martens, Davy Gaillot, M. Lienard, Jose-Maria Molina-Garcia-Pardo, Maria-Teresa Martinez-Ingles

The electromagnetic reverberation time characteristics are investigated at UltraWide Band (UWB) frequencies, i.e., from 2 to 10 GHz. The reverberation time is bandwidth independent and decreases as the frequency increases. Besides, the reverberation ratio - the contribution of the diffuse fields in...

2014 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, AP-S/URSI 2014, Jul 2014, Memphis, TN, United States. pp.1181-1182, ⟨10.1109/APS.2014.6904917⟩. ⟨hal-03346231⟩

• Article dans une revue

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, A. Telia, Nour Eddine Bourzgui, Gilles Patriarche, A. Ougazzaden, A. Ben Moussa

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D...

Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩. ⟨hal-01009966⟩

• Communication dans un congrès

Scanning tunneling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy

I. Razado-Colambo, J.P. Nys, X. Wallart, S. Godey, J. Avila, M.C. Asensio, D. Vignaud

4th Graphene Conference, Graphene 2014, 2014, Toulouse, France. 2 p. ⟨hal-00962361⟩

• Communication dans un congrès

Microwave optical switches metal-semiconductor-metal Schottky based on GaAs

Sabah Benzeghda, Farida Hobar, Didier Decoster, Jean-Francois Lampin, A. Benzeghda

Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is...

International Conference on Renewable Energies and Power Quality, ICREPQ'14, 2014, Córdoba, Spain. paper 534, 5 p., ⟨10.24084/repqj12.534⟩. ⟨hal-00955226⟩

• Article dans une revue

Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

Katir Ziouche, G. Savelli, Zahia Bougrioua, D. Hauser, P. Lejeune, P.M. Michon, Tuami Lasri, Didier Leclercq

This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (μSIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a...

Journal of Applied Physics, 2014, 116 (4), 043701, 7 p. ⟨10.1063/1.4891020⟩. ⟨hal-01055042⟩

• Article dans une revue

Unconventional thin-film thermoelectric converters : structure, simulation, and comparative study

Maciej Haras, Valeria Lacatena, Stéphane Monfray, J.F. Robillard, Thomas Skotnicki, Emmanuel Dubois

Bi2Te3 or Sb2Te3 are the materials most widely used in thermoelectric generators (TEG) operating near room temperature. These materials are, however, environmentally harmful, expensive, and incompatible with complementary metal-oxide semiconductor technology, in contrast to silicon (Si), germanium...

Journal of Electronic Materials, 2014, 43, pp.2109-2114. ⟨10.1007/s11664-014-2982-z⟩. ⟨hal-00994781⟩