Publicaciones

• Article dans une revue

Monte Carlo simulations of single polymer force-extension relations

F. Manca, S. Giordano, Pier Luca Palla, F. Cleri, L. Colombo

Journal of Physics: Conference Series, 2012, 383, pp.012016-1-6. ⟨10.1088/1742-6596/383/1/012016⟩. ⟨hal-00790417⟩

• Article dans une revue

Spectroscopic diagnostics and modelling of N2-Ar mixture discharge created by a RF helical coupling device - I. Kinetics of N2(B3Πg) and N2(C3Πu) states

C. Foissac, J. Kristof, A. Annusova, P. Veis, P. Supiot

Plasma Sources Science and Technology, 2012, 21, pp.055021-1-11. ⟨hal-00790405⟩

• Article dans une revue

Terahertz interferometer for integrated Goubau-line waveguides

Simon Laurette, A. Treizebre, Nour Eddine Bourzgui, Bertrand Bocquet

An integrated Terahertz {Mach-Zehnder} interferometer is presented in order to perform differential measurements in a chip. Both simulation and experiment are performed for validating the interferometer structure. Destructive interference peaks are observed, and destructive frequencies are...

Progress In Electromagnetics Research Letters, 2012, 30, pp.49-58. ⟨10.2528/PIERL11121205⟩. ⟨hal-00788303⟩

• Article dans une revue

Impact of low gamma radiation dose on electrical trap related effects in AlGaN/GaN HEMTs

F. Berthet, Y. Guhel, B. Boudart, H. Gualous, J.L. Trolet, M. Piccione, Christophe Gaquière

Electronics Letters, 2012, 48, pp.1078-1079. ⟨10.1049/el.2012.1966⟩. ⟨hal-00788173⟩

• Article dans une revue

Performances of the negative tone resist AZnLOF 2020 for nanotechnology applications

Etienne Herth, Emmanuelle Algre, Pascal Tilmant, Martin François, Christophe Boyaval, Bernard Legrand

We present electron-beam lithography results on an AznLOF2020 UV negative tone resist. This study aims to define electron-beam lithography parameters compatible with microelectromechanical systems/nanoelectromechanical systems fabrication. Usually, one of the properties of the resist material is...

IEEE Transactions on Nanotechnology, 2012, 11 (4), pp.854-859. ⟨10.1109/TNANO.2012.2196802⟩. ⟨hal-00787415⟩

• Communication dans un congrès

The thermal effect on the output conductance in AlGaN/GaN HEMT's

A. Bellakhdar, A. Telia, L. Semra, A. Soltani

24th International Conference on Microelectronics, ICM 2012, 2012, Algiers, Algeria. pp.1-4, ⟨10.1109/ICM.2012.6471365⟩. ⟨hal-00814968⟩

• Communication dans un congrès

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to...

7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩

• Article dans une revue

Enhancement of bonding strength of packaging based on BCB bonding for RF devices

S. Seok, M. Fryziel, N. Rolland, P.A. Rolland

Microsystem Technologies, 2012, 18, pp.2035-2039. ⟨10.1007/s00542-012-1530-0⟩. ⟨hal-00786909⟩

• Article dans une revue

MEMS ring resonators for laserless AFM with sub-nanoNewton force resolution

Emmanuelle Algre, Zhuang Xiong, Marc Faucher, Benjamin Walter, Lionel Buchaillot, Bernard Legrand

A concept of atomic force microscopy (AFM) oscillating sensors using electromechanical silicon microresonators is presented, and imaging capabilities are demonstrated. The microresonators are designed to feature MHz resonance frequencies, and they are batch fabricated using standard silicon...

Journal of Microelectromechanical Systems, 2012, 21, pp.385-397. ⟨10.1109/JMEMS.2011.2179012⟩. ⟨hal-00787407⟩

• Article dans une revue

Conduction degradation in anisotropic multi-cracked materials

S. Giordano, Pier Luca Palla

The European Physical Journal B: Condensed Matter and Complex Systems, 2012, 85, pp.59-1-15. ⟨10.1140/epjb/e2011-20814-5⟩. ⟨hal-00787354⟩