Publicaciones

• Article dans une revue

Ultracompact optical filter based on a stub resonator in GaInAsP/InP optical wire technology

Sophie Maricot, Marie Lesecq, Jean-Pierre Vilcot, Christiane Legrand, Marc François, Maxime Beaugeois

Optics Letters, 2009, 34, pp.1936-1938. ⟨10.1364/OL.34.001936⟩. ⟨hal-00473045⟩

• Article dans une revue

Comment on "Size-dependent composition and molar extinction coefficient of PbSe semiconductor nanocrystals

Iwan Moreels, Karel Lambert, David de Muynck, Frank Vanhaecke, Dirk Poelman, José C Martins, Guy Allan, Zeger Hens

Comment on "Size-dependent composition and molar extinction coefficient of PbSe semiconductor nanocrystals". ACS Nano, 2009, 3, pp.2053. ⟨10.1021/nn9005363⟩. ⟨hal-00473074⟩

• Article dans une revue

Orbital and charge-resolved polaron states in CdSe dots and rods probed by scanning tunneling spectroscopy

Z. Sun, I. Swart, C. Delerue, D. Vanmaekelbergh, P. Liljeroth

Physical Review Letters, 2009, 102, pp.196401-1-4. ⟨10.1103/PhysRevLett.102.196401⟩. ⟨hal-00473341⟩

• Article dans une revue

Approach to interference cancellation in DS-CDMA optical networks

A. Okassa-M'Foubat, Iyad Dayoub, Jean-Michel Rouvaen, W. Hamouda, A. Mazen

Journal of Optical Communications and Networking, 2009, 1, pp.204-212. ⟨10.1364/JOCN.1.000204⟩. ⟨hal-00471830⟩

• Article dans une revue

2x2 InP optical switching matrix based on carrier-induced effects for 1.55-µm applications

Malek Zegaoui, Nargess Choueib, Joseph Harari, Didier Decoster, V. Magnin, X. Wallart, Jean Chazelas

This letter demonstrates a 2 × 2 low optical crosstalk and low power consumption switching matrix device based on carrier-induced effects on an InP substrate. The matrix device comprises two digital optical switches (DOSs) with a wide multimode Y-junction associated with a sinusoidal passive...

IEEE Photonics Technology Letters, 2009, 21 (19), pp.1357-1359. ⟨10.1109/LPT.2009.2026484⟩. ⟨hal-00472780⟩

• Article dans une revue

Reconfigurable complex digital delta-sigma modulator synthesis for digital wireless transmitters

C.N. Nzeza, A. Kaiser, A. Cathelin

Revue Roumaine des Sciences Techniques. Serie Électrotechnique et Énergétique, 2009, 4, pp.385-394. ⟨hal-00471992⟩

• Article dans une revue

Fast relaxation of hot carriers by impact ionization in semiconductor nanocrystals : role of defects

Guy Allan, Christophe Delerue

We present calculations predicting that defects at the surface of semiconductor nanocrystals have a strong influence on the dynamics of hot carriers after photoexcitation. The relaxation of excited carriers by impact ionization of carriers trapped on deep levels is efficient, in particular in the...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.195324-1-5. ⟨10.1103/PhysRevB.79.195324⟩. ⟨hal-00473094⟩

• Article dans une revue

Electron transport properties of gallium nitride for microscopic power device modelling

Brahim Benbakhti, Michel Rousseau, Ali Soltani, Jean-Claude de Jaeger

The design of power GaN devices has to take into account the impact of temperature on device materials due to highly dissipated power and a consequent large self-heating. The accurate knowledge of transport properties as a function of the lattice temperature is essential in order to make a good...

Journal of Physics: Conference Series, 2009, 193, pp.012005-1-4. ⟨10.1088/1742-6596/193/1/012005⟩. ⟨hal-00473639⟩

• Article dans une revue

Contactless microwave technique based on a spread-loss model for dielectric materials characterization

Kamel Haddadi, M.M. Wang, O. Benzaim, D. Glay, T. Lasri

IEEE Microwave and Wireless Components Letters, 2009, 19, pp.33-35. ⟨10.1109/LMWC.2008.2008573⟩. ⟨hal-00472450⟩

• Article dans une revue

Carrier dynamics in Fe-doped GaN epilayers

R. Aleksiejunas, M. Azize, Z. Bougrioua, T. Malinauskas, S. Nargelas, K. Jarasiunas

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.S723-S726. ⟨10.1002/pssc.200880832⟩. ⟨hal-00472681⟩