Publicaciones

• Article dans une revue

In-plane polarities of nonpolar wurtzite epitaxial films deposited on m- and r-plane sapphire substrates

Philippe Vennéguès, Tiankai Zhu, Z. Bougrioua, Denis Martin, J. Zuniga-Perez, Nicolas Grandjean

The in-plane polarities of GaN and ZnO non-polar films deposited on r - and m-sapphire are compared. The polarity is unique on r-sapphire and mixed on m-sapphire because the direction on the substrate surface parallel to the wurztite c-direction is polar in the first case and nonpolar in the second...

Japanese Journal of Applied Physics Part 1: Regular Papers and Short Notes and Review Papers, 2009, 48 (9), pp.090211-1-3. ⟨10.1143/JJAP.48.090211⟩. ⟨hal-00472455⟩

• Article dans une revue

Fast relaxation of hot carriers by impact ionization in semiconductor nanocrystals : role of defects

Guy Allan, Christophe Delerue

We present calculations predicting that defects at the surface of semiconductor nanocrystals have a strong influence on the dynamics of hot carriers after photoexcitation. The relaxation of excited carriers by impact ionization of carriers trapped on deep levels is efficient, in particular in the...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.195324-1-5. ⟨10.1103/PhysRevB.79.195324⟩. ⟨hal-00473094⟩

• Article dans une revue

Determination of the electrostatic lever arm of carbon nanotube field effect transistors using Kelvin force microscopy

David Brunel, D. Deresmes, Thierry Melin

We use Kelvin force microscopy (KFM) to study the electrostatic properties of single-walled carbon nanotube field effect transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete...

Applied Physics Letters, 2009, 94, pp.223508-1-3. ⟨10.1063/1.3148364⟩. ⟨hal-00473086⟩

• Communication dans un congrès

A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation

Maciej Sakowicz, Jerzy Łusakowski, Krzysztof Karpierz, Marian Grynberg, Wojciech Gwarek, Stephane Boubanga Tombet, Dominique Coquillat, Wojciech Knap, Andrey Shchepetov, S. Bollaert

The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency...

29th International Conference on Physics of Semiconductors, ICPS-29, Jul 2008, Rio de Janeiro, Brazil. pp.503-504, ⟨10.1063/1.3295528⟩. ⟨hal-00545966⟩

• Article dans une revue

Applicability of acoustic noise correlation for structural health monitoring in nondiffuse field conditions

Emmanuel Moulin, Najib Abou Leyla, Jamal Assaad, Sébastien Grondel

Ambient noise correlation offers an elegant way of passively caracterize a medium. The principle is that in diffuse field condition, Green’s function between two sensors can be retrieved from the cross-correlated received signals. Here, the technique is applied in conditions where convergence...

Applied Physics Letters, 2009, 95, pp.094104-1-3. ⟨10.1063/1.3200240⟩. ⟨hal-00473707⟩

• Communication dans un congrès

Electrode sizing for guided wave resonator above a Bragg mirror

I. Kone, A. Reinhardt, F. Domingue, Bertrand Dubus, L. Buchaillot, F. Casset, J.F. Carpentier, M. Aid

63rd IEEE International Frequency Control Symposium, joint with 23rd European Frequency and Time Forum, EFTF-IFCS 2009, 2009, France. pp.904-907, ⟨10.1109/FREQ.2009.5168318⟩. ⟨hal-00474071⟩

• Communication dans un congrès

Channel estimation of OFDM system for high data rate communications on mobile environments

Boudali Ouarzazi, Marion Berbineau, Iyad Dayoub, Atika Rivenq

One of the main challenges of the 4th generation wireless systems is to provide high data rates in mobile environments. In these 4G products, WiMax (worldwide interoperability for microwave access) and LTE (long term evolution) will be the platform technologies. The rapid development of the...

9th International Conference on Intelligent Transport Systems Telecommunications, ITST 2009, Oct 2009, Lille, France. pp.425-429, ⟨10.1109/ITST.2009.5399317⟩. ⟨hal-00474121⟩

• Article dans une revue

A simple method for measuring Si-Fin sidewall roughness by AFM

X.H. Tang, V. Bayot, N. Reckinger, D. Flandre, J.P. Raskin, Emmanuel Dubois, B. Nysten

The gate oxide reliability and the electrical behavior of FinFETs are directly related to the surface characteristics of the fin vertical sidewalls. The surface roughness of the fin sidewalls is one of the most important structural parameters to be monitoredin order to optimize the fin patterning...

IEEE Transactions on Nanotechnology, 2009, 8, pp.611-616. ⟨10.1109/TNANO.2009.2021064⟩. ⟨hal-00471972⟩

• Article dans une revue

Defect modes in one-dimensional anisotropic photonic crystal

Noama Ouchani, Driss Bria, Bahram Djafari-Rouhani, Abdlekarim Nougaoui

We theoretically analyze the defect states in a single-defect photonic crystal composed of anisotropic dielectric materials. This structure can trap light of a given frequency range and filter only a certain frequency light. It is shown that the defect modes appear as peaks in the transmission...

Journal of Applied Physics, 2009, 106 (11), pp.113107. ⟨10.1063/1.3266005⟩. ⟨hal-00473077⟩

• Article dans une revue

Phononic crystals and manipulation of sound

Yan Pennec, Bahram Djafari-Rouhani, H. Larabi, Jerome O. Vasseur, Anne-Christine Hladky

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.2080-2085. ⟨10.1002/pssc.200881760⟩. ⟨hal-00473419⟩