Publicaciones

• Article dans une revue

Vanishing gap in LiF for electronic excitations by slow antiprotons

B. Solleder, L. Wirtz, J. Burgdörfer

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.125107-1-8. ⟨10.1103/PhysRevB.79.125107⟩. ⟨hal-00473400⟩

• Article dans une revue

STM/STS investigation of silicon adatoms

R. Stiufiuc, B. Grandidier, G. Stiufiuc

Optoelectronics and Advanced Materials - Rapid Communications, 2009, 3, pp.1005-1007. ⟨hal-00473364⟩

• Communication dans un congrès

Transrating by frequencies selectivity for H.264/AVC intra pictures

Christophe Deknudt, Patrick Corlay, A.S. Bacquet, François-Xavier Coudoux, M. Guarisco, H. Rabah, Y. Berviller, Sébastien J. Weber

IEEE International Symposium on Broadband Multimedia Systems and Braodcasting, BMSB 2009, 2009, Spain. pp.59-64, ⟨10.1109/ISBMSB.2009.5133730⟩. ⟨hal-00474152⟩

• Communication dans un congrès

An overview of impulse and self-heterodyne 60-GHz systems for hybrid networks based on polymer multimode fibres

Christophe Loyez, C. Lethien, Michael Bocquet, N. Deparis, Laurent Clavier, Jean-Pierre Vilcot, N. Rolland, P.A. Rolland

39th European Microwave Conference, EuMC 2009, 2009, Italy. pp.468-471, ⟨10.1109/EUMC.2009.5296019⟩. ⟨hal-00474166⟩

• Communication dans un congrès

In-situ silicon integrated tuner for automated on-wafer MMW noise parameters extraction using multi-impedance method for transistor characterization

Y. Tagro, D. Gloria, S. Boret, Y. Morandini, Gilles Dambrine

22nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2009, 2009, United States. pp.184-188, ⟨10.1109/ICMTS.2009.4814637⟩. ⟨hal-00474097⟩

• Communication dans un congrès

Frequency response of T-shaped three branch junctions as mixers and detectors

I. Iniguez de La Torre, T. Gonzalez, D. Pardo, C. Gardes, Yannick Roelens, S. Bollaert, J. Mateos

7th Spanish Conference on Electron Devices, CDE 09, 2009, Spain. pp.168-171, ⟨10.1109/SCED.2009.4800457⟩. ⟨hal-00474095⟩

• Article dans une revue

Recent ROB developments on wide bandgap based UV sensors

B. Giordanengo, A. Ben Moussa, Jean-François Hochedez, A. Soltani, P. de Moor, K. Minoglou, P. Malinowski, J.Y. Duboz, Y.M. Chong, Y.S. Zou, W.J. Zhang, S.T. Lee, R. Dahal, J. Li, J.Y. Lin, H.X. Jiang

The next ESA spatial mission planned to study the Sun, Solar Orbiter (SO), necessitates very innovative EUV detectors. The commonly used silicon detectors suffer important limitations mainly in terms of UV robustness and dark current level. An alternative comes from diamond or III-nitride materials...

EAS Publications Series, 2009, 37, pp.199-205. ⟨10.1051/eas/0937025⟩. ⟨hal-00473643⟩

• Communication dans un congrès

Terahertz biomems for enzymatic catalysis monitoring

Abdennour Abbas, A. Treizebre, Nour Eddine Bourzgui, Didier Guillochon, Dominique Vercaigne-Marko, Philippe Supiot, Bertrand Bocquet

This work focuses on the fabrication and use of a Biological Micro-ElectroMechanical System (BioMEMS) for TeraHertz (THz) detection and characterization of enzymatic catalysis reactions. The fluidic microdevice was fabricated using traditional lithographic techniques. It was then functionalized by...

5th International Conference on Microtechnologies in Medicine and Biology, Jun 2009, Québec City, Canada. pp.214-215. ⟨ird-00397688⟩

• Article dans une revue

Acoustic wave transmission through piezoelectric structured materials

M. Lam, E. Le Clezio, H. Amorin, M. Alguero, J. Holc, M. Kosec, Anne-Christine Hladky, G. Feuillard

Ultrasonics, 2009, 49, pp.424-431. ⟨10.1016/j.ultras.2008.11.001⟩. ⟨hal-00469003⟩

• Article dans une revue

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

N. Reckinger, X.H. Tang, V. Bayot, Dmitri Yarekha, S. Godey, Emmanuel Dubois, X. Wallart, G. Larrieu, A. Laszcz, J. Ratajczak, P.J. Jacques, J.P. Raskin

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to decrease substantially from 0.43 eV for as-deposited samples to reach its lowest value, 0.28 eV, at 450°C. By x-ray diffraction, high...

Applied Physics Letters, 2009, 94 (19), pp.191913. ⟨10.1063/1.3136849⟩. ⟨hal-00471985⟩