Publicaciones

• Article dans une revue

First internal spacers' introduction in record high I-ON/I-OFF TiN/HfO2 gate multichannel MOSFET satisfying both high-performance and low standby power requirements

E. Bernard, T. Ernst, B. Guillaumot, N. Vulliet, T.C. Lim, O. Rozeau, Francois Danneville, P. Coronel, T. Skotnicki, S. Deleonibus, O. Faynot

IEEE Electron Device Letters, 2009, 30, pp.148-151. ⟨10.1109/LED.2008.2009008⟩. ⟨hal-00471806⟩

• Article dans une revue

SU-8 photoresist and SU-8 based nanocomposites for broadband acoustical matching at 1 GHz

Assane Ndieguene, Pierre Campistron, Julien Carlier, S. Wang, Dorothée Debavelaere-Callens, Bertrand Nongaillard

So as to integrate acoustic functions in BioMEMS using 1 GHz ZnO transducers deposited on silicon substrates, acoustic waves propagation through the silicon substrate and its transmission in water needs to be maximized (the insertion losses at the Si / water interface are about 6dB). In the context...

Journal of Physics: Conference Series, 2009, 195, pp.012005-1-8. ⟨10.1088/1742-6596/195/1/012005⟩. ⟨hal-00473733⟩

• Article dans une revue

Acousto-optic tunable filter using double interaction for sidelobe reduction

Jean-Claude Kastelik, Hichem Benaissa, Samuel Dupont, Michel Pommeray

We present a bifrequency acousto-optic tunable filter (AOTF) for applications using polychromatic laser beams. The acousto-optic device is based on two successive anisotropic interactions in paratellurite: the first takes place with an acoustic shear wave tilted at 10° from the [110] axis, while...

Applied optics, 2009, 48, pp.C4-C10. ⟨10.1364/AO.48.0000C4⟩. ⟨hal-00473044⟩

• Article dans une revue

High frequency ultrasonic detection of C-crack defects in silicon nitride bearing balls

F. Deneuville, Marc Duquennoy, Mohammadi Ouaftouh, Mohamed Ourak, Frédéric Jenot, S. Desvaux

Ultrasonics, 2009, 49, pp.89-93. ⟨10.1016/j.ultras.2008.06.010⟩. ⟨hal-00473716⟩

• Article dans une revue

Use of the circuit approach to solve large EMC problems

S. Leman, B. Demoulin, O. Maurice, M. Cauterman, P. Hoffmann

Comptes Rendus. Physique, 2009, 10, pp.70-82. ⟨10.1016/j.crhy.2009.01.006⟩. ⟨hal-00473696⟩

• Article dans une revue

MMICs time-domain electrical physical simulator adapted to the parallel computation

A. El Moussati, Jean-Claude de Jaeger, Christophe Dalle

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2009, 22, pp.279-296. ⟨10.1002/jnm.706⟩. ⟨hal-00473652⟩

• Article dans une revue

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Yvon Cordier, Fabrice Semond, Jean-Christophe Moreno, Éric Frayssinet, Brahim Benbakhti, Z. Cao, Sébastien Chenot, Lee Nguyen, Olivier Tottereau, Ali Soltani, Karine Blary

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩. ⟨hal-00473644⟩

• Article dans une revue

(6 x 2) Reconstruction of the Ag/Si(111) surface at 77 K (vol 603, pg 311, 2009) - Corrigendum

A. Urbieta, K. Schulte, B. Grandidier, D. Deresmes, S.C. Erwin, D. Stievenard

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2009, 603, pp.1079-1079. ⟨10.1016/j.susc.2009.02.002⟩. ⟨hal-00473064⟩

• Article dans une revue

The inter-modes mixing effects in mode group diversity multiplexing

M. Awad, Iyad Dayoub, A. Okassa M'Foubat, Jean-Michel Rouvaen

Optics Communications, 2009, 282, pp.3908-3917. ⟨10.1016/j.optcom.2009.06.065⟩. ⟨hal-00471836⟩

• Article dans une revue

Preparation and multi-characterization of plasma polymerized allylamine films

Abdennour Abbas, Céline Vivien, Bertrand Bocquet, Didier Guillochon, Philippe Supiot

Plasma polymerized allylamine (ppAA) films were deposited in a radio-frequency glow discharge plasma reactor using a continuous-wave mode and varying the discharge power from 15 to 125 W. The deposition rate reached 26 nm · min−1 and was constant within at least half an hour of process. The...

Plasma Processes and Polymers, 2009, 6, pp.593-604. ⟨10.1002/ppap.200900016⟩. ⟨hal-00471822⟩