Publicaciones

Affichage de 12971 à 12980 sur 16261


  • Communication dans un congrès

Fabrication and analysis of CMOS fully-compatible high conductance impact-ionization MOS (I-MOS) transistors

C. Charbuillet, Emmanuel Dubois, S. Monfray, P. Bouillon, T. Skotnicki

2006, pp.299-302. ⟨hal-00138680⟩

  • Communication dans un congrès

Self-assembling carbon nanotubes for electronics

J.P. Bourgoin, S. Auvray, J. Borghetti, Vincent Derycke, M.F. Goffman, P. Chenevier, L. Goux-Capes, A. Filoramo, R. Lefevre, S. Straif, K. Nguyen, S. Lyonnais, Et Al., D. Vuillaume

Trends in Nanotechnology Conference, TNT2006, 2006, Grenoble, France. ⟨hal-00138912⟩

  • Communication dans un congrès

Les actionneurs piézo-électriques pour le contrôle dynamique de vibration

S. Tliba, M. Pham-Thi, Anne-Christine Hladky, B. Bonomi

2006, pp.673-676. ⟨hal-00140160⟩

  • Communication dans un congrès

Influence des conditions climatiques sur les capteurs textiles à base de matériau conducteur nano composite

C. Cochrane, V. Koncar, M. H. Lewandowski, J. Belloncle, C. Dufour

Matériaux 2006, 2006, Dijon, France. ⟨hal-00243999⟩

  • Communication dans un congrès

MEMS electromechanical resonators for RF applications

F. Casset, C. Durand, N. Abele, K. Segueni, L. Buchaillot, A.M. Ionescu, P. Ancey

16ème Forum de l'Interconnexion et du Packaging Microélectronique, INTERCONEX 2006, 2006, Besançon, France. ⟨hal-00244017⟩

  • Communication dans un congrès

Specific nearby electronic scheme for multiplexed excitation and detection of piezoelectric silicon-based micromembranes resonant frequencies using FPGA technology

Denis Lagrange, Cédric Ayela, Liviu Nicu, Eric Cattan, Caroline Soyer

5th IEEE Conference on Sensors, IEEE Sensors 2006, 2006, South Korea. pp.45-49, ⟨10.1109/ICSENS.2007.355714⟩. ⟨hal-00244027⟩

  • Article dans une revue

TEM study of PtSi contacts layers for low Schottky barrier MOSFETs

A. Laszcz, J. Katcki, J. Ratajczak, A. Czerwinski, N. Breil, G. Larrieu, Emmanuel Dubois

We report investigations of the silicide formation process in the Pt/Si structure of low Schottky barrier MOSFETs on SOI. The silicide layers are used there as source and drain contacts and the high quality of the silicide/Si interface and the silicide structure are essential for the electrical...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.274-277. ⟨10.1016/j.nimb.2006.10.033⟩. ⟨hal-00138656⟩

  • Communication dans un congrès

Dynamic response of carbon nanotube field-effect transistors in the GHz range analysed by S-parameters measurements

Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Vincent Derycke, M. F. Goffman, Jean-Philippe Bourgoin

Materials Research Society Fall Meeting, Symposium Q : Nanowires and Carbon Nanotubes - Science and Applications, Nov 2006, Boston, United States. pp.Q13.2. ⟨hal-00241320⟩