Publicaciones
Affichage de 13701 à 13710 sur 16434
Noise in SOI MOSFETs and gate-all-around transistors
B. Iniguez, A. Lazaro, H.A. Hamid, G. Pailloncy, Gilles Dambrine, Francois Danneville
18th International Conference on Noise and Fluctuations, ICNF 2005, 2005, Salamanca, Spain. ⟨hal-00125321⟩
High power and linearity performances of gallium nitride HEMT devices on sapphire substrate
M. Werquin, Christophe Gaquière, Y. Guhel, N. Vellas, D. Theron, B. Boudart, Virginie Hoel, Marie Germain, Jean-Claude de Jaeger, S. Delage
Electronics Letters, 2005, 41 (1), ⟨10.1049/el:20056735⟩. ⟨hal-01646906⟩
High mobility InAs/AlInAs metamorphic heterostructures on InP (001)
X. Wallart, J. Lastennet, F. Mollot
2005, pp.94-97. ⟨hal-00125391⟩
As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system
S. Dhellemmes, S. Godey, A. Wilk, X. Wallart, F. Mollot
Journal of Crystal Growth, 2005, 278, pp.564-568. ⟨hal-00125361⟩
Hydrous profile modeling in porous materials from reflection coefficient measurement at 2.45 GHz
D. Glay, T. Lasri
2005, pp.206-213. ⟨hal-00125334⟩
Spectroscopie de nanocristaux de semiconducteurs : enjeux récents, études théoriques
Christophe Delerue, Guy Allan
Congrès général de la Société Française de Physique, 2005, Lille, France. ⟨hal-00126454⟩
Molecular interactions of PTCDA on Si(100) and H-Si(100) surfaces : towards self-assembled molecular nanocristals
Francois Vaurette, T. Soubiron, B. Grandidier, J.P. Nys, X. Wallart, D. Stiévenard
Materials Research Society 2005 Fall Meeting, 2005, Boston, MA, United States. ⟨hal-00126448⟩
Multi-resolution modulation : an optimization criterion based on information theory
Marie Zwingelstein, M Gharbi, Marc G. Gazalet
2005, pp.CD-ROM, CT07-1. ⟨hal-00126481⟩
Acceptor states in GaAs studied by X-STS at 5K
B. Grandidier, G. Mahieu, D. Deresmes, J.P. Nys, D. Stievenard, P. Ebert
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques, STM'05, 2005, Sapporo, Japan. ⟨hal-00126437⟩
Implementation of a 2D electron-thermal model for power semiconductor devices simulation : application on gallium nitride
Brahim Benbakhti, Michel Rousseau, Jean-Claude de Jaeger
Comsol Multiphysics Conference, 2005, Paris, France. ⟨hal-00126464⟩