Publicaciones

• Communication dans un congrès

Data transmission and distance measurement between two trains in tunnels

M. Lienard, Pierre Laly, Pierre Degauque

2004, pp.CD session B2. ⟨hal-00142001⟩

• Autre publication scientifique

Analyse des propriétés électromagnétiques des écrans cylindriques, application à la caractérisation de l'efficacité de blindage des câbles

Frédéric Broydé

2004. ⟨hal-00142006⟩

• Communication dans un congrès

Transposition of a base band UWB impulse radio signal at 60 GHz for high data rate multiple access indoor communication systems

N. Deparis, Christophe Loyez, M. Fryziel, N. Rolland, P. Rolland

2004, pp.253-256. ⟨hal-00142278⟩

• Communication dans un congrès

3 bit 90° phase shifter using microfluidic technology

L. Le Cloirec, A. Benlarbi-Delai, Bertrand Bocquet

Addressing systems that require broadband devices for high data rate communication or high resolution radar, we develop the concept of a millimeter phase shifter that combines micro strip or coplanar wave guide and microfluidic facilities. To illustrate this approach we built from a simple...

34th European Microwave Conference, Oct 2004, Amsterdam, Netherlands. pp.1161-1164. ⟨hal-00142282⟩

• Communication dans un congrès

Quasi-particle gap, dielectric properties and electronic correlations in semiconductor nanostructures

Christophe Delerue, Michel Lannoo, Guy Allan

Workshop on Theory and Modeling of Electronic Excitations in Nanoscience, NANOEXC2004, 2004, Acquafredda di Maratea, Italy. ⟨hal-00141287⟩

• Article dans une revue

Confinement effects in PbSe quantum wells and nanocrystals

Guy Allan, Christophe Delerue

The effect of quantum confinement in PbSe quantum wells and dots is studied using tight binding calculations. Compared to zinc-blende semiconductors, unusual physical properties are predicted for rock salt PbSe nanostructures. The energy gap increases as the inverse of the size both for wells and...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70, pp.245321/1-9. ⟨10.1103/PhysRevB.70.245321⟩. ⟨hal-00141253⟩

• Article dans une revue

Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors (MOSFETs)

Emmanuel Dubois, G. Larrieu

Journal of Applied Physics, 2004, 96, pp.729-737. ⟨hal-00140973⟩

• Article dans une revue

Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy

A. Wilk, M. Zaknoune, S. Godey, S. Dhellemmes, P. Gérard, C. Chaix, F. Mollot

The rapid setup of the molecular beam epitaxy (MBE) growth process for GaInP/GaAs heterostructure bipolar transistor (HBT) in an all solid-source multiwafer production MBE system is reported. The first 100×100 μm2 large area test structures enable determination of the static gain, which is above...

Journal of Vacuum Science and Technology, 2004, 22 (3), pp.1444-1449. ⟨10.1116/1.1738665⟩. ⟨hal-00162756⟩

• Autre publication scientifique

Evaluation de la dégradation du béton par ondes ultrasonores

S. Ould Naffa

2004. ⟨hal-00162783⟩

• Ouvrages

Organic field effect transistors : towards molecular scale

G. Horowitz, F. Biscarini, D. Vuillaume

Elsevier, 177 p., 2004. ⟨hal-00133401⟩