Publicaciones

• Article dans une revue

Surface impedance matrix for the study of acoustical propagation in multilayered structures

V. Zhang, Tadeusz Gryba, J.M. Orellana, B. Collet

Acta Acustica united with Acustica, 2002, 88, pp.218-230. ⟨hal-00147806⟩

• Communication dans un congrès

Spectroscopie STM de semiconducteurs et de molécules organiques

D. Stievenard

Ecole Thématique de Porquerolles, 2002, Porquerolles, France. ⟨hal-00149688⟩

• Communication dans un congrès

Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz

M. Ardouin, B. Bonte, M. Zaknoune, D. Theron, Y. Cordier, S. Bollaert, Jean-Claude de Jaeger

2002, pp.165-168. ⟨hal-00149697⟩

• Communication dans un congrès

Analyse physique des HEMTs à base de nitrure de gallium

M. Elkhou, Michel Rousseau, Jean-Claude de Jaeger

GDR Semiconducteurs à large bande interdite, 2002, Montpellier, France. ⟨hal-00149718⟩

• Article dans une revue

Ferroelectric (116) SrBi2Nb2O9 thin films epitaxially grown by pulsed laser deposition on epitaxial (110) Pt/(110) SrTiO3 electrode

Jean-René Duclere, Maryline Guilloux-Viry, A. Perrin, Eric Cattan, Caroline Soyer, Denis Remiens

Epitaxial SrBi2Nb2O9 thin films have been grown by pulsed-laser deposition on (110)Pt bottom electrode epitaxially grown on (110) SrTiO3 by dc sputtering. X-ray φ-scans and electron channeling patterns reveal the epitaxial growth of the (116) SrBi2Nb2O9/(110)Pt bilayers. The hysteresis loop,...

Applied Physics Letters, 2002, 81 (11), pp.2067-2069. ⟨10.1063/1.1504179⟩. ⟨hal-00149629⟩

• Article dans une revue

High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz

Nicolas Vellas, Christophe Gaquière, Yannick Guhel, Matthieu Werquin, Frédéric Bue-Erkmen, Sylvain Laurent Delage, B. Boudart, Fabrice Semond, Jean-Claude de Jaeger

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high...

IEEE Electron Device Letters, 2002, 23 (8), pp.461-463. ⟨10.1109/LED.2002.801328⟩. ⟨hal-00149698⟩

• Autre publication scientifique

Couches minces ferroélectriques pour applications opto-microélectroniques

El Hadj Dogheche

2002. ⟨hal-00149625⟩

• Communication dans un congrès

32-QAM radio transmission over multimode fibre beyond the fiber bandwidth

D. Wake, Samuel Dupont, Jean-Pierre Vilcot, A.J. Seeds

2002, 4 pp. ⟨hal-00149639⟩

• Article dans une revue

Characterization method of film-shaped materials. Pressure effect measurement on the electromagnetic properties into an absorbent material of compressed powder

J. Hinojosa, K. Lmimouni

AEU. International Journal of Electronics and Communications, 2002, 56, pp.211-214. ⟨hal-00148716⟩

• Communication dans un congrès

Design of clamped-clamped beam resonator in thick-film epitaxial polysilicon technology

D. Galayko, A. Kaiser, Bernard Legrand, L. Buchaillot, C. Combi, D. Collard

2002, pp.447-450. ⟨hal-00148736⟩