Publicaciones

• Article dans une revue

Experimental and Theoretical Evidence for the Existence of Absolute Acoustic Band Gaps in Two-Dimensional Solid Phononic Crystals

Jerome O. Vasseur, J. Vasseur, P. Deymier, B. Chenni, Bahram Djafari-Rouhani, L. Dobrzynski, D. Prevost

Physical Review Letters, 2001, 86 (14), pp.3012-3015. ⟨10.1103/PhysRevLett.86.3012⟩. ⟨hal-03302013⟩

• Article dans une revue

Gab1 phosphorylation: a novel mechanism for negative regulation of HGF receptor signaling

Philippe Gual, Stefano Giordano, S Anguissola, Pj Parker, Pm Comoglio

Signal transduction by HGF receptor, the tyrosine kinase encoded by the MET oncogene, switches on a genetic program called 'invasive growth' inducing epithelial cell dissociation, migration, growth, and ultimately leading to differentiation into branched tubular structures. Sustained...

Oncogene, 2001, 20 (2), pp.156-166. ⟨10.1038/sj.onc.1204047⟩. ⟨hal-04496823⟩

• Article dans une revue

Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si (100) surface

B. Grandidier, Jean-Philippe Nys, Didier Stiévenard, Christophe Krzeminski, Christophe Delerue, Pierre Frere, Phillippe Blanchard, Jean Roncali

The adsorption of thienylenevinylene oligomers on the Si(100) surface has been investigated using scanning tunneling microscopy. The mode of substitution of the thiophene ring exerts a strong influence on the adsorption configurations and the images of the oligomer based on 3,4-dihexyl thiophene...

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2001, 473 (1-2), pp.1-7. ⟨10.1016/S0039-6028(00)00946-8⟩. ⟨hal-00688535⟩

• Article dans une revue

Free-carrier mobility in GaN in the presence of dislocation walls

J.-L. Farvacque, Z. Bougrioua, I. Moerman

The free-carrier mobility versus carrier density in n-type GaN grown by low-pressure metal-organic vapor- phase epitaxy on a sapphire substrate experiences a particular behavior that consists of the appearance of a sharp transition separating a low- from a high-mobility regime. This separation...

Physical Review B, 2001, 63 (11), ⟨10.1103/PhysRevB.63.115202⟩. ⟨hal-02906502⟩

• Thèse

Études pour la réalisation d'un modulateur électro-optique à ondes progressives sur polymères, Studies for the development of a polymer-based traveling-wave electro-optic modulator

Jean-François Larchanché

Le modulateur électro-optique à ondes progressives est un bon candidat pour la modulation à haute fréquence. Une revue des différents types de modulateurs sur niobate de lithium et sur semi-conducteur III-V met en relief les bénéfices de l'utilisation d'une ligne microruban et la..., The traveling-wave electro-optic modulator is a strong candidate for high-frequency modulation. A review of various modulator types based on lithium niobate and III-V semiconductors highlights the benefits of using a microstrip line and the necessity of using a material better suited for this...

Sciences de l'ingénieur [physics]. Université des sciences et technologies de Lille, 2001. Français. ⟨NNT : ⟩. ⟨tel-05437557⟩

• Article dans une revue

High-speed evanescently coupled PIN photodiodes for hybridisation on silicon platform optimised with genetic algorithm

L. Giraudet, Joseph Harari, V. Magnin, P. Pagnod, E. Boucherez, J. Decobert, J. Bonnet-Gamerd, D. Carpentier, C. Jany, F. Blache, Didier Decoster

Electronics Letters, 2001, 37, pp.973-975. ⟨hal-00152492⟩

• Communication dans un congrès

60 GHz 420 mW/mm low gate current GaInAs/InP composite channel HEMT on InP substrate

Mustafa Boudrissa, Elisabet Delos, X. Wallart, Didier Theron, Jean-Claude de Jaeger

XXV Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2001, May 2001, Cagliari, Sardinia, Italy. ⟨hal-00152631⟩

• Communication dans un congrès

Du matériau au composant : le modulateur électro-optique à ondes progressives

Didier Decoster, J.F. Larchanche, B. Bellini

Réunion finale CTI Polymères, 2001, Cachan, France. ⟨hal-00152541⟩

• Communication dans un congrès

High performance AlGaN/GaN HEMTs on a resistive silicon substrate

Virginie Hoel, Y. Guhel, N. Vellas, Christophe Gaquière, Jean-Claude de Jaeger, Y. Cordier, F. Semond, F. Natali, J. Massies

11th European Heterostrucrure Technology Workshop, HETECH 01, 2001, Padova, Italy. ⟨hal-00152670⟩

• Communication dans un congrès

ECR-silicon nitride passivation of III-V transistors

S. Shapoval, V. Gurtovoi, A. Kovalchuk, Christophe Gaquière

XXV Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2001, 2001, Cagliari, Sardinia, Italy. ⟨hal-00152674⟩