Publicaciones

• Article dans une revue

Micromachining techniques at terahertz frequencies

S. Arscott, R.E. Miles, S.J. Milne

IEE Proceedings - Circuits, Devices and Systems, 1998, 145 (5), pp.335. ⟨10.1117/12.361055⟩. ⟨hal-02348103⟩

• Communication dans un congrès

Simulation globale du fonctionnement à 94 GHz d'un oscillateur ATT pulsé, basée sur le couplage de modèles physique, électrique, thermique et électromagnétique

Christophe Dalle, Stéphane Beaussart, Marie-Renée Friscourt

Workshop MTT, chapitre français, 1998, La Rochelle, France. ⟨hal-00005310⟩

• Communication dans un congrès

A complementary approach to the access design of millimeter power HFETs

Yann Michel Niquet, Stephane Piotrowicz, Bertrand Bonte, X. Hue, S. Trassaert, B. Boudart, Y. Crosnier

A complementary approach to the access design of millimeter power HFETs . 28th European Microwave Conference (EUMC) , 1998, Amsterdam, Netherlands. ⟨hal-01649391⟩

• Communication dans un congrès

Etude du contact Ti/Al/Ni/Au sur GaN

S. Trassaert, B. Boudart, Xavier Wallart, J.C. Pesant, L Fugère, Didier Theron, Y. Crosnier

GDR Matériaux Grand Gap, 1998, Villeneuve d'Ascq, France. ⟨hal-01654461⟩

• Proceedings/Recueil des communications

Radio over Fiber Telecommunications Systems : the Key Optoelectronic Devices for the Receiver

Jean-Pierre Vilcot, Manuel Fendler, Filipe Jorge, J. Barette, Vincent Magnin, Sophie Maricot, Didier Decoster

Recent developments in radio over fiber telecommunication systems such as micro- or pico- cellular mobile communications would require specific performance from either optical emitters or receivers . In this paper, we will describe this receiver part, i.e. the optical to micro- or millimeter- wave...

COMPOUND SEMICONDUCTOR POWER TRANSISTORS and STATE- OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXIX), 98 (12), THE ELECTROCHEMICAL SOCIETY, INC., pp.257, 1998, 9781566772228. ⟨hal-04452141⟩

• Article dans une revue

Influence of the operating temperature on the design and utilization of 94 GHz pulsed silicon IMPATT diodes

Christophe Dalle, Stéphane Beaussart, Marie-Renée Friscourt

The RF and thermal behavior of 94-GHz P/sup +/PNN/sup +/ double drift flat doping profile silicon impact ionization avalanche transit time (IMPATT) diodes for high-power pulsed operation is investigated by means of time domain electrical oscillator models. It is demonstrated that these diodes have...

IEEE Electron Device Letters, 1998, EDL-19, pp.262-264. ⟨10.1109/55.701437⟩. ⟨hal-00005339⟩

• Article dans une revue

94 GHz pulsed silicon IMPATT oscillator modelling

Stéphane Beaussart, Olivier Perrin, Marie-Renée Friscourt, Christophe Dalle

A new type of 94-GHz pulsed silicon impact avalanche and transit time (IMPATT) oscillator numerical modeling is described. It consists of a set of three models of increasing complexity; namely, a pure sine model, time-domain isothermal model, and time-domain electro-thermal model, which basically...

IEEE Transactions on Microwave Theory and Techniques, 1998, 46, pp.1382-1390. ⟨10.1109/22.721139⟩. ⟨hal-00005340⟩

• Chapitre d'ouvrage

Microwave short-range interferometer

A. Benlarbi-Delai, J.C. Cousin, R. Ringot, A. Mamouni, Y. Leroy

MSM (Microsystems), Volume 1, NSTI Publications, Danville, CA USA, pp.637-642, 1998. ⟨hal-00132367⟩

• Article dans une revue

Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid/hydrogen peroxide/ammonium hydroxide for power applications

X. Hue, B. Boudart, Y. Crosnier

The etching characteristics of GaAs and Al0.22Ga0.78AsAl0.22Ga0.78As in citric acid/hydrogen peroxide/ammonium hydroxide etching solution were studied. The selectivity of GaAs to Al0.22Ga0.78AsAl0.22Ga0.78As was as high as 200 at 20 °C20 °C (510 at 0 °C0 °C) by optimizing the pHpH and citric acid/...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 1998, 16 (5), pp.2675-2679. ⟨10.1116/1.590255⟩. ⟨hal-01644716⟩

• Communication dans un congrès

A multimedia educative tool concerning microwave circuits, based on a physical approach of their time-domain operation

M.R. Friscourt, Christophe Dalle

2nd European Workshop on Microelectronics Education, 1998, Noordwijkerhout, Netherlands. ⟨hal-00005309⟩