Publicaciones

• Article dans une revue

Atomic-scale structure of the glassy Ge 2 Sb 2 Te 5 phase change material: A quantitative assessment via first-principles molecular dynamics

Assil Bouzid, Guido Ori, Mauro Boero, Evelyne Lampin, Carlo Massobrio

The amorphous structure of the phase change material Ge2Sb2Te5 (GST) has been the object of controversial structural models. By employing first-principles molecular dynamics within density functional theory, we are able to obtain quantitative agreement with experimental structural findings for the...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 96 (22), pp.224204. ⟨10.1103/PhysRevB.96.224204⟩. ⟨hal-02349392⟩

• Communication dans un congrès

Wireless monitoring system for lightweight aircraft landing gear

Christophe Delebarre, Sébastien Grondel, Samuel Dupont, F Rouvarel, M Yoshida

Mass repartition onboard lightweight aircraft is a crucial problem as it may generate difficulties for the pilot during the landing phase. Being able for the pilot to land the plane properly is of course an important aspect for safety, but also for structure integrity. So the mass repartition...

18th International Conference on Research and Education in Mechatronics (REM 2017), Sep 2017, Wolfenbuettel, Germany. pp.1-6, ⟨10.1109/REM.2017.8075230⟩. ⟨hal-03549288⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 6/2]

Raffaele Pisano

2017. ⟨hal-04511014⟩

• Article dans une revue

A New Photomechanical Molecular Switch Based on a Linear π-Conjugated System

Stéphane Lenfant, Yannick Viero, Christophe Krzeminski, Dominique Vuillaume, Dora Demeter, I. L. Dobra, Maiténa Oçafrain, Philippe Blanchard, Jean Roncali, C. van Dick, Jérôme Cornil

We report the electron-transport properties of a new photoaddressable molecular switch. The switching process relies on a new concept based on linear π-conjugated dynamic systems, in which the geometry and, hence, the electronic properties of an oligothiophene chain can be reversibly modified by...

Journal of Physical Chemistry C, 2017, 121 (22), pp.12416-12425. ⟨10.1021/acs.jpcc.7b01240⟩. ⟨hal-02564470⟩

• Article dans une revue

Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, F Medjdoub

In this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs...

IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2820-2825. ⟨10.1109/TED.2017.2703809⟩. ⟨hal-01560627⟩

• Article dans une revue

Zero echo time MRI- only treatment planning for radiation therapy of brain tumors after resection

C. Boydev, B. Demol, David Pasquier, Hervé Saint-Jalmes, G. Delpon, N. Reynaert

Using magnetic resonance imaging (MRI) as the sole imaging modality for patient modeling in radiation therapy (RT) is a challenging task due to the need to derive electron density information from MRI and construct a so-called pseudo-computed tomography (pCT) image. We have previously published a...

Physica Medica European Journal of Medical Physics, 2017, 42, pp.332-338. ⟨10.1016/j.ejmp.2017.04.028⟩. ⟨hal-01671400⟩

• Article dans une revue

High Frequency Acoustic On-Chip Integration for Particle Characterization and Manipulation in Microfluidics

Sizhe Li, Julien Carlier, Malika Toubal, Huiqin Liu, Pierre Campistron, Dorothee Callens, Georges Nassar, Bertrand Nongaillard, Shishang Guo

This letter presents a microfluidic device that integrates high frequency (650 MHz) bulk acoustic waves for the realization of particle handling on-chip. The core structure of the microfluidic chip is made up of a confocal lens, a vertical reflection wall, and a ZnO film transducer coupled with a...

Applied Physics Letters, 2017, 111 (16), pp.163503. ⟨10.1063/1.5003414⟩. ⟨hal-03258701⟩

• Article dans une revue

Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique

F. Berthet, S. Petitdidier, Y. Guhel, J.L. Trolet, P. Mary, A. Vivier, Christophe Gaquière, B. Boudart

Solid-State Electronics, 2017, 127, pp.13 - 19. ⟨10.1016/j.sse.2016.10.039⟩. ⟨hal-01646143⟩

• Article dans une revue

Flexible Nanoholey Patches for Antibiotic-Free Treatments of Skin Infections

Chengnan Li, Ran Ye, Julie Bouckaert, Amaia Zurutuza, Djamel Drider, Tetiana Dumych, Solomiya Paryzhak, Volodymyr Vovk, Rostyslav O. Bilyy, Sorin Melinte, Musen Li, Rabah Boukherroub, Sabine Szunerits

Despite the availability of different antibiotics, bacterial infections are still one of the leading causes of hospitalization and mortality. The clinical failure of antibiotic treatment is due to a general poor antibiotic penetration to bacterial infection sites as well as the development of...

ACS Applied Materials & Interfaces, 2017, 9 (42), pp.36665-36674. ⟨10.1021/acsami.7b12949⟩. ⟨hal-01716582⟩

• Article dans une revue

Influence of neutron irradiation on electron traps induced by NGB stress in AlInN/GaN HEMTs

Sébastien Petitdidier, Yannick Guhel, Guillaume Brocero, Philippe Eudeline, Jean-Lionel Trolet, Patrick Mary, Christophe Gaquière, Bertrand Boudart

IEEE Transactions on Nuclear Science, 2017, pp.1 - 1. ⟨10.1109/TNS.2017.2708692⟩. ⟨hal-01645121⟩