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  • Communication dans un congrès

On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

Philippe Altuntas, N. Defrance, Marie Lesecq, Alain Agboton, Rezki Ouhachi, Etienne Okada, Christophe Gaquière, Jean-Claude de Jaeger, Éric Frayssinet, Yvon Cordier

This paper reports on the kink effect observed in InAlN/GaN high electron mobility transistors. Electrical characterizations were carried out to point out the influence of this phenomenon on transistor behaviour. It is demonstrated that the kink effect is directly correlated to shallow traps...

9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.88-91, ⟨10.1109/EuMIC.2014.6997798⟩. ⟨hal-03276914⟩