Publicaciones

• Communication dans un congrès

[Invited] High frequency electronic devices : impact of beyond graphene materials

Henri Happy, D. Mele, Ivy Colambo, Mohamed Salah Khenissa, Mohamed Moez Belhaj, Emiliano Pallecchi, Abdelkarim Ouerghi, Dominique Vignaud, Gilles Dambrine

Considering graphene field effect transistors (GFETs), considerable efforts have been made during the recent years to reach impressive current gain cut-off frequency (ft) over 400 GHz. Unfortunately, for these devices, the maximum frequency of oscillation (fmax) remains under 100GHz. This deviation...

62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WFK - Beyond Graphene Electronic Devices and their Potential for High-Frequency Applications, 2014, Tampa, FL, United States. ⟨hal-01044773⟩

• Autre publication scientifique

Etude de la cinétique des décharges et post-décharges excitées à hautes et très hautes fréquences dans les mélanges azotés

Adriana Annusova

Ce travail porte sur l'étude de la cinétique des décharges et post-décharges dans l'azote et les mélanges azotés en écoulement à pressions modérées. Des travaux de modélisations cinétiques ont été effectués sur la base des résultats expérimentaux afin de comprendre les processus de...

2014. ⟨hal-01044810⟩

• Article dans une revue

Hypersonic band gap in an AlN-TiN bilayer phononic crystal slab

S. Hemon, Abdellatif Akjouj, A. Soltani, Yan Pennec, Y. El Hassouani, Abdelkrim Talbi, V. Mortet, Bahram Djafari-Rouhani

We show both theoretically and experimentally the existence of a complete band gap in a phononic crystal (PnC) constituted by periodical air holes drilled in a solid bi-layer slab. The composite slab is formed with an aluminum nitride (AlN) layer deposited on a titanium nitride (TiN) thin metallic...

Applied Physics Letters, 2014, 104, 063101, 5 p. ⟨10.1063/1.4864310⟩. ⟨hal-00947576⟩

• Communication dans un congrès

[Invited] Surface science of semiconductor nanowires

B. Grandidier

International Nano-Optoelectronic Workshop, iNOW 2014, 2014, St. Petersburg, Russia. ⟨hal-01044671⟩

• Communication dans un congrès

Optical and microstructural properties into nanoporous GaN films grown on sapphire by metal organic chemical vapor deposition

Bandar Alshehri, S.-M. Lee, J.-H. Kang, Karim Dogheche, S.-H. Gong, S.-W. Ryu, E. Dumont, Y.-H. Cho, El Hadj Dogheche

Gallium Nitride (GaN) thin films have been prepared on sapphire by metal organic chemical vapor deposition (MOCVD) technique and a chemical etching method using KOH is used to develop nanoporous structures [1]. We present comparative investigations of porous and nonporous GaN layers. While the...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, 2014, Lille, France. ⟨hal-00961412⟩

• Article dans une revue

Dispersion characteristic of ultrathin terahertz planar lenses based on metasurface

Dan Hu, Gabriel Moreno, Xinke Wang, Jingwen He, Abdallah Chahadih, Zhenwei Xie, Bo Wang, Tahsin Akalin, Yan Zhang

Terahertz (THz) radiation has attached a lot of attention due to its potential applications. The smart optical components will greatly boost the application of the THz technology. Ultrathin planar lenses which can greatly reduce the thickness of the components are designed and fabricated in the THz...

Optics Communications, 2014, 322, pp.164-168. ⟨10.1016/j.optcom.2014.02.017⟩. ⟨hal-00961382⟩

• Communication dans un congrès

Improved wet chemical transfer process to obtain clean high quality graphene

Geetanjali Deokar, Jean-Louis Codron, Emmanuelle Pichonat, Xavier Wallart, Henri Happy, Dominique Vignaud

Graphene growth on metal substrates (Cu, Ni etc.) by catalyzed chemical vapor deposition (CVD) is a highly suitable method for large scale production [1,2]. However, graphene based electronic devices full realization requires a clean and reproducible graphene transfer on non-conducting substrates,...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961392⟩

• Communication dans un congrès

Architectures supramoléculaires sur la surface de Si(111)-B

Younes Makoudi, Judicaël Jeannoutot, Matthieu Beyer, Bulent Baris, B. Grandidier, Frank Palmino, Frédéric Cherioux

La formation des réseaux supramoléculaires périodiques à grande échelle sur une surface est d'un intérêt primordial pour le développement de composants intelligents [1]. Cet objectif nécessite la synthèse des molécules organiques ayant des fonctions appropriées en vue d'obtenir des...

17ème Forum des Microscopies à Sonde Locale, Mar 2014, Mantauban, France. session 7, papier 25, 68-69. ⟨hal-00961550⟩

• Communication dans un congrès

Monitoring conductance switching by light in azobenzene derivative-gold nano-particle self-assembled networks

Yannick Viero, Stéphane Lenfant, David Guérin, Dominique Vuillaume

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium M - Molecular materials - Towards quantum properties (MOLMAT-Q), 2014, Lille, France. ⟨hal-00957796⟩

• Article dans une revue

Cross-talk artefacts in Kelvin probe force microscopy imaging : a comprehensive study

Sophie Barbet, Michka Popoff, Heinrich Diesinger, D. Deresmes, Didier Theron, Thierry Melin

We provide in this article a comprehensive study of the role of ac cross-talk effects in Kelvin Probe Force Microscopy (KPFM), and their consequences onto KPFM imaging. The dependence of KPFM signals upon internal parameters such as the cantilever excitation frequency and the projection angle of...

Journal of Applied Physics, 2014, 115 (14), pp.144313. ⟨10.1063/1.4870710⟩. ⟨hal-00981142⟩