Publicaciones
Affichage de 7901 à 7910 sur 16279
A novel mesoscopic phenomenon : an analog of the Braess paradox in 2DEG networks
H. Sellier, M. Pala, S. Baltazar, P. Liu, B. Hackens, F. Martins, X. Wallart, L. Desplanque, V. Bayot, S. Huant
16th International Conference on Modulated Semiconductor Structures, MSS-16, 2013, Wroclaw, Poland. ⟨hal-00878505⟩
Métamatériaux flexibles à base d'empilements de réseaux métalliques pour les fréquences THz
N. Soltani, Guillaume Ducournau, J. Thielleux, Eric Lheurette, D. Lippens
18èmes Journées Nationales Microondes, JNM 2013, 2013, PAris, France. papier J2-TM2-3, 4 p. ⟨hal-00878381⟩
Crystallographic orientation dependence of dielectric response in lead strontium titanate thin films
K. Li, Denis Remiens, J. Costecalde, N. Sama, G. Du, T. Li, X.L. Dong, G.S. Wang
Journal of Crystal Growth, 2013, 377, pp.143-146. ⟨10.1016/j.jcrysgro.2013.05.017⟩. ⟨hal-00877655⟩
High frequency ultrasound measurements on a translucent thin bioglass, based on Si, Ca, Na : study of the distribution of elastic modulus
A. Bachar, Georges Nassar, Cyrille Albert-Mercier, F. Bouchart, C. Follet, R. Amrousse, M. Kazan
Optical Materials, 2013, 36, pp.75-79. ⟨10.1016/j.optmat.2013.05.009⟩. ⟨hal-00877713⟩
Tunable interdigitated capacitances on Ba0.3Sr0.7TiO3 thin-film
A. Ghalem, Freddy Ponchel, Denis Remiens, Jean-François Legier, T. Lasri
Integrated Ferroelectrics, 2013, 142, pp.44-51. ⟨10.1080/10584587.2013.780151⟩. ⟨hal-00877714⟩
Modeling of high contrast partially electroded resonators by means of a polynomial approach
P.M. Rabotovao, F.E. Ratolojanahary, Jean-Etienne Lefebvre, A. Raherison, L. Elmaimouni, Tadeusz Gryba, J.G. Yu
Journal of Applied Physics, 2013, 114 (12), pp.124502. ⟨10.1063/1.4821768⟩. ⟨hal-00877665⟩
Les effets du couplage inter-éléments dans les réseaux de transducteurs acoustiques
Abdelmajid Bybi, Jamal Assaad, Sébastien Grondel, Marc Duquennoy, Anne-Christine Hladky, Christian Granger
6ème Colloque Interdisciplinaire en Instrumentation, C2I 2013, 2013, Lyon, France. pp.47-54. ⟨hal-00955219⟩
Robust surface-potential-based compact model for GaN HEMT IC design
S. Khandelwal, C. Yadav, S. Agnihotri, Y.S. Chauhan, A. Curutchet, T. Zimmer, J.C. Dejaeger, N. Defrance, T.A. Fjeldly
IEEE Transactions on Electron Devices, 2013, 60, pp.3216-3222. ⟨10.1109/TED.2013.2265320⟩. ⟨hal-00872023⟩
Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices
F Medjdoub, B. Grimbert, D. Ducatteau, N. Rolland
Japanese Journal of Applied Physics, part 2 : Letters, 2013, 6, pp.044001-1-3. ⟨10.7567/APEX.6.044001⟩. ⟨hal-00809852⟩