Publicaciones

• Communication dans un congrès

Millimeter-wave ultra-wide-band antenna array integrated on silicon with BCB membranes

L. Dussopt, H. Salti, J. Kim, S. Seok, N. Rolland

Joint 2012 IEEE International Symposium on Antennas and Propagation and USNC-URSI National Radio Science Meeting, APS-URSI 2012, 2012, Chicago, IL, United States. paper 258.3, 1-2, ⟨10.1109/APS.2012.6348057⟩. ⟨hal-00801063⟩

• Communication dans un congrès

DNA origami imaging with 10.9 MHz AFM MEMS probes

B. Walter, E. Mairiaux, Z. Xiong, M. Faucher, L. Buchaillot, Bernard Legrand

25th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2012, 2012, Paris, France. pp.555-558, ⟨10.1109/MEMSYS.2012.6170236⟩. ⟨hal-00801107⟩

• Communication dans un congrès

Wafer-level BCB cap packaging of integrated MEMS switches with MMIC

S. Seok, J.G. Kim, M. Fryziel, N. Rolland, P.A. Rolland, H. Maher, W. Simon, R. Baggen

60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6258270⟩. ⟨hal-00801069⟩

• Communication dans un congrès

Aspects of computing with locally connected networks

V. Beiu, M. Calame, G. Cuniberti, C. Gamrat, Z. Konkoli, D. Vuillaume, G. Wendin, S. Yitzchaik

10th International Conference of Numerical Analysis and Applied Mathematics, ICNAAM 2012, 2012, Kos, Greece. pp.1875-1879, ⟨10.1063/1.4756547⟩. ⟨hal-00801092⟩

• Communication dans un congrès

A 65nm CMOS 1-to-10GHz tunable continuous-time low-pass filter for high-data-rate communications

H. Fawzi, M. Egot, A. Kaiser, A. Cathelin, B. Nauta

IEEE International Solid-State Circuits Conference, ISSCC 2012, 2012, San Francisco, CA, United States. pp.362-364, ⟨10.1109/ISSCC.2012.6177052⟩. ⟨hal-00801102⟩

• Article dans une revue

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

L. Desplanque, S. El Kazzi, J.L. Codron, Y. Wang, P. Ruterana, G. Moschetti, J. Grahn, X. Wallart

Applied Physics Letters, 2012, 100, pp.262103-1-4. ⟨10.1063/1.4730958⟩. ⟨hal-00786990⟩

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:...

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

• Communication dans un congrès

AlN/GaN-on-silicon devices for millimeter wave high power/low noise applications

F Medjdoub, Malek Zegaoui, Y. Tagro, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

6th Space Agency - MOD Workshop on Wideband Gap Semiconductors and Components, 2012, Noordwijk, Netherlands. pp.CD-ROM, 1-8. ⟨hal-00801061⟩

• Communication dans un congrès

Effect of strain relaxation on the drain conductance in AlGaN/GaN HEMTs

A. Bellakhdar, A. Telia, L. Semra, A. Soltani

1st International Conference on Engineering and Technology, ICET 2012, 2012, Cairo, Egypt. pp.1-5, ⟨10.1109/ICEngTechnol.2012.6396129⟩. ⟨hal-00801158⟩

• Communication dans un congrès

Transport properties of strained silicon nanowires

Y.M. Niquet, C. Delerue, V.H. Nguyen, Christophe Krzeminski, F. Triozon

42nd European Solid-State Device Research Conference, ESSDERC 2012, 2012, Bordeaux, France. pp.session C3L-G, 290-293, ⟨10.1109/ESSDERC.2012.6343390⟩. ⟨hal-00801132⟩