Publicaciones

Affichage de 8491 à 8500 sur 16279


  • Communication dans un congrès

Contrôle passif des tubes par inter-corrélation de champ acoustique ambiant

S. Djili, Emmanuel Moulin, Jamal Assaad, F. Boubenider, Farouk Benmeddour

3ème Conférence Internationale sur le Soudage, le Contrôle Non Destructif et l'Industrie des Matériaux et Alliages, IC-WNDT-MI'12, 2012, Aïn El Turck-Oran, Algérie. pp.17-21. ⟨hal-00802648⟩

  • Communication dans un congrès

An optimized pilots position method for V2X synchronization

A. Sassi, F. Charfi, L. Kamoun, Yassin El Hillali, Atika Rivenq

6th International Symposium on Signal, Image, Video and Communications, ISIVC 2012, 2012, Valenciennes, France. paper ID 43, 171-175. ⟨hal-00802522⟩

  • Communication dans un congrès

An upper bound of soft decode and forward relaying over Rayleigh fading channels

H. Ben Chikha, Iyad Dayoub, S. Chaoui, R. Attia

16th WSEAS International Conference on Communications, part of CSCC'12, 2012, Kos Island, Greece. pp.485-489. ⟨hal-00802558⟩

  • Communication dans un congrès

Time-domain semiconductor structure simulation based on 2D/3D coupled electromagnetism/transport modeling

Christophe Dalle

Advanced Electromagnetics Symposium, AES 2012, 2012, Paris, France. pp.116-120. ⟨hal-00802589⟩

  • Communication dans un congrès

A 1kPixel CMOS camera chip for 25fps real-time terahertz imaging applications

H. Sherry, J. Grzyb, Y. Zhao, R. Al Hadi, A. Cathelin, A. Kaiser, U. Pfeiffer

IEEE International Solid-State Circuits Conference, ISSCC 2012, 2012, San Francisco, CA, United States. pp.252-254, ⟨10.1109/ISSCC.2012.6176997⟩. ⟨hal-00801095⟩

  • Communication dans un congrès

Characterization on AlGaN/GaN/Si HEMTs devices passivated with SiN/SiO2

H. Mosbahi, M. Gassoumi, M.A. Zaidi, Vanessa Avramovic, Christophe Gaquière, B. Grimbert, H. Maaref

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801155⟩

  • Communication dans un congrès

[Invited] New generation of flexible GHz graphene transistor

H. Happy, C. Sire, F. Ardiaca, Sylvie Lepilliet, J.W.T. Seo, M.C. Hersam, Gilles Dambrine, Vincent Derycke

19th International Display Workshops joint with Asia Display 2012, IDW/AD'12, 2012, Kyoto, Japan. pp.139-140. ⟨hal-00801045⟩

  • Communication dans un congrès

Source-drain scaling of ion-implanted InAs/AlSb HEMTs

G. Moschetti, P. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.57-60, ⟨10.1109/ICIPRM.2012.6403318⟩. ⟨hal-00801079⟩

  • Communication dans un congrès

State of the art 200 GHz power measurements on SiGe:C HBT using an innovative load pull measurement setup

A. Pottrain, T. Lacave, D. Gloria, P. Chevalier, Christophe Gaquière

60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6259409⟩. ⟨hal-00801191⟩

  • Communication dans un congrès

Band offsets : nano is not bulk

Y.M. Niquet, C. Delerue

15th International Workshop on Computational Electronics, IWCE-15, 2012, Madison, WI, United States. pp.3-4. ⟨hal-00801124⟩