Publicaciones

Affichage de 9981 à 9990 sur 16278


  • Article dans une revue

Gold-free growth of GaAs nanowires on silicon : arrays and polytypism

S.R. Plissard, K. A. Dick, G. Larrieu, S. Godey, A. Addad, X. Wallart, P. Caroff

Nanotechnology, 2010, 21, pp.385602-1-8. ⟨10.1088/0957-4484/21/38/385602⟩. ⟨hal-00548717⟩

  • Article dans une revue

Oligothiophene-derivatized azobenzene as immobilized photoswitchable conjugated systems

S. Karpe, M. Oçafrain, K. Smaali, S. Lenfant, D. Vuillaume, P. Blanchard, J. Roncali

Chemical Communications, 2010, 46, pp.3657-3659. ⟨10.1039/c002072a⟩. ⟨hal-00548970⟩

  • Article dans une revue

Structured light fringe projection setup using optimized acousto-optic deflectors

Samuel Dupont, Jean-Claude Kastelik, Michel Pommeray

IEEE/ASME Transactions on Mechatronics, 2010, 15, pp.557-560. ⟨10.1109/TMECH.2010.2052627⟩. ⟨hal-00549025⟩

  • Article dans une revue

Computer simulation of disordered structures and nanosystems : an atomic-scale view

C. Massobrio, F. Cleri, R. Kozubski

Solid State Sciences, 2010, 12, pp.155-156. ⟨10.1016/j.solidstatesciences.2010.01.016⟩. ⟨hal-00549045⟩

  • Article dans une revue

Faceted sidewalls of silicon nanowires : Au-induced structural reconstructions and electronic properties

T. Xu, J.P. Nys, A. Addad, O.I. Lebedev, A. Urbieta, B. Salhi, Maxime Berthe, B. Grandidier, D. Stievenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81, pp.115403-1-10. ⟨10.1103/PhysRevB.81.115403⟩. ⟨hal-00549070⟩

  • Article dans une revue

High-speed 1.3-µm p-i-n GaNAsSb/GaAs waveguide photodetector

Malek Zegaoui, Z. Xu, N. Saadsaoud, Kianhuan Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

The authors report the demonstration of high-speed GaNAsSb/GaAs p-i-n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4-μm-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 μm is sandwiched by GaAs and AlGaAs cladding layers. The device...

IEEE Electron Device Letters, 2010, 31 (7), pp.704-706. ⟨10.1109/LED.2010.2049563⟩. ⟨hal-00549006⟩

  • Article dans une revue

Dual phononic and photonic band gaps in a periodic array of pillars deposited on a thin plate

Y. El Hassouani, C. Li, Yan Pennec, E.H. El Boudouti, H. Larabi, Abdellatif Akjouj, Olivier Bou Matar, V. Laude, N. Papanikolaou, A. Martinez, Bahram Djafari-Rouhani

We discuss the simultaneous existence of phononic and photonic band gaps in a periodic array of holes drilled in a Si membrane. We investigate in detail both the centered square lattice and the boron nitride (BN) lattice with two atoms per unit cell which include the simple square, triangular and...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.155405-1-7. ⟨10.1103/PhysRevB.82.155405⟩. ⟨hal-00549058⟩

  • Communication dans un congrès

α-stable interference modelling and relay selection for regenerative cooperative IR-UWB systems

Jie Chen, Laurent Clavier, Y. Xi, A. Burr, N. Rolland, P.A. Rolland

3rd European Wireless Technology Conference, EuWiT 2010, 2010, France. pp.81-84. ⟨hal-00549926⟩