Publicaciones

• Article dans une revue

Improvement of ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors

E. Mairiaux, L. Desplanque, X. Wallart, M. Zaknoune

Journal of Vacuum Science and Technology, 2010, 28, pp.17-20. ⟨10.1116/1.3268134⟩. ⟨hal-00548563⟩

• Article dans une revue

Sb-HEMT : toward 100-mV cryogenics electronics

A. Noudewiva, Yannick Roelens, Francois Danneville, A. Olivier, Nicolas Wichmann, N. Waldhoff, Sylvie Lepilliet, Gilles Dambrine, L. Desplanque, X. Wallart, G. Moschetti, J. Grahn, S. Bollaert

IEEE Transactions on Electron Devices, 2010, 57, pp.1903-1909. ⟨10.1109/TED.2010.2050109⟩. ⟨hal-00548570⟩

• Article dans une revue

Laser generated guided waves and finite element modeling for the thickness gauging of thin layers

F. Lefevre, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Review of Scientific Instruments, 2010, 81, pp.034901-1-5. ⟨10.1063/1.3317734⟩. ⟨hal-00549540⟩

• Article dans une revue

Self-assembled germanium quantum-dot supercrystals in silicon with extremely low thermal conductivities for thermoelectrics

J.N. Gillet, S. Volz

Journal of Electronic Materials, 2010, 39, pp.2154-2161. ⟨10.1007/s11664-009-0977-y⟩. ⟨hal-00549632⟩

• Article dans une revue

Molecular relaxation dynamics in organic monolayer junctions

S. Pleutin, N. Clement, David Guérin, D. Vuillaume

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.125436-1-13. ⟨10.1103/PhysRevB.82.125436⟩. ⟨hal-00548968⟩

• Article dans une revue

Crystal phase engineering in single InAs nanowires

K.A. Dick, C. Thelander, L. Samuelson, P. Caroff

Nano Letters, 2010, 10, pp.3494-3499. ⟨10.1021/nl101632a⟩. ⟨hal-00548711⟩

• Article dans une revue

Architecture-dependent signal conduction in model networks of endothelial cells

P.A. Deymier, M. Eray, M.J. Deymier, K. Runge, J.B. Hoying, Jerome O. Vasseur

Physical Review E : Statistical, Nonlinear, and Soft Matter Physics [2001-2015], 2010, 81, pp.041915-1-9. ⟨10.1103/PhysRevE.81.041915⟩. ⟨hal-00549038⟩

• Article dans une revue

Dielectric function of colloidal lead chalcogenide quantum dots obtained by a Kramers-Krönig analysis of the absorbance spectrum

Iwan Moreels, Guy Allan, Bram de Geyter, Ludger Wirtz, Christophe Delerue, Zeger Hens

We combined the Maxwell-Garnett effective medium theory with the Kramers-Krönig relations to obtain the complex dielectric function ϵ of colloidal PbS, PbSe, and PbTe quantum dots (Qdots). The method allows extracting both real (ϵR) and imaginary (ϵI) parts of the dielectric function from the...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81, pp.235319-1-7. ⟨10.1103/PhysRevB.81.235319⟩. ⟨hal-00549057⟩

• Article dans une revue

Imaging the operation of a carbon nanotube charge sensor at the nanoscale

David Brunel, Alexandre Mayer, Thierry Melin

Carbon nanotube field effect transistors (CNTFETs) are of great interest for nanoelectronics applications such as nonvolatile memory elements (NVMEs) or charge sensors. In this work, we use a scanning-probe approach based on a local charge perturbation of CNTFET-based NVMEs and investigate their...

ACS Nano, 2010, 4, pp.5978-5984. ⟨10.1021/nn1012435⟩. ⟨hal-00549080⟩

• Article dans une revue

Graphene buffer layer on Si-terminated SiC studied with an empirical interatomic potential

Evelyne Lampin, Catherine Priester, Christophe Krzeminski, Laurence Magaud

The atomistic structure of the graphene buffer layer on Si-terminated SiC is investigated using a modified version of the environment-dependent interatomic potential. The determination of the equilibrium state by the conjuguate gradients method suffers from a complex multiple-minima energy surface...

Journal of Applied Physics, 2010, 107 (10), pp.103514. ⟨10.1063/1.3357297⟩. ⟨hal-00549078⟩