Publicaciones

• Article dans une revue

Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy

A. Wilk, M. Zaknoune, S. Godey, S. Dhellemmes, P. Gérard, C. Chaix, F. Mollot

The rapid setup of the molecular beam epitaxy (MBE) growth process for GaInP/GaAs heterostructure bipolar transistor (HBT) in an all solid-source multiwafer production MBE system is reported. The first 100×100 μm2 large area test structures enable determination of the static gain, which is above...

Journal of Vacuum Science and Technology, 2004, 22 (3), pp.1444-1449. ⟨10.1116/1.1738665⟩. ⟨hal-00162756⟩

• Autre publication scientifique

Evaluation de la dégradation du béton par ondes ultrasonores

S. Ould Naffa

2004. ⟨hal-00162783⟩

• Communication dans un congrès

Input impedance and radiation performance of planar and quasi-planar Fabry-Perot based directive antennas

Ronan Sauleau, Philippe Coquet

27th ESA Antenna Technology Workshop on Innovative Periodic Antennas, Mar 2004, Saint-Jacques de Compostelle, Spain. pp.401-408. ⟨hal-00549294⟩

• Article dans une revue

Evolution of the density of states from a two- to a zero-dimensional semiconductor

Zeger Hens, B. Grandidier, D. Deresmes, Guy Allan, Christophe Delerue, Didier Stiévenard, Daniel Vanmaekelbergh

Lead selenide nanocrystals have been electrodeposited on gold(111) with a high degree of control over their dimensions, giving rise to isolated nanocrystals with different edge-to-height aspect ratio. The electron density of states (DOS) of individual nanocrystals as a function of their aspect...

EPL - Europhysics Letters, 2004, 65, pp.809-815. ⟨10.1209/epl/i2003-10130-3⟩. ⟨hal-00141246⟩

• Communication dans un congrès

Analysis of hot carrier aging degradation in GaN MESFETs

R. Pierobon, F. Rampazzo, D. Pacetta, Christophe Gaquière, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni

2004, pp.143-146. ⟨hal-00141969⟩

• Article dans une revue

Raman characterization of Mg⁺ ion-implanted GaN

B. Boudart, Y. Guhel, J.C. Pesant, P. Dhamelincourt, M.A. Poisson

Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purposes. The implantation dose varied from 7.5 × 1012 to 1016 ions cm-2. We performed resonance Raman spectroscopy and DC electrical measurements in order to monitor the structural and electrical changes...

• Communication dans un congrès

Transposition of a base band UWB impulse radio signal at 60 GHz for high data rate multiple access indoor communication systems

N. Deparis, Christophe Loyez, M. Fryziel, N. Rolland, P. Rolland

2004, pp.253-256. ⟨hal-00142278⟩

• Ouvrages

Organic field effect transistors : towards molecular scale

G. Horowitz, F. Biscarini, D. Vuillaume

Elsevier, 177 p., 2004. ⟨hal-00133401⟩

• Communication dans un congrès

Modelisation et simulation de la technlogie MOS ultimes

E. Lampin, Christophe Krzeminski, T. Alkalin, V. Cuny

GDR Nanoélectronique, 2004, Aussois, France. ⟨hal-00140992⟩

• Communication dans un congrès

Design and modeling of microwave applicators and antennas for medical applications

Luc Dubois, Pierre-Yves Cresson, C. Ricard, Nicolas Bernardin, Joseph Pribetich

International Symposium on Microwave Science and its Application to Related Fields, Jul 2004, Takamatsu, Japan. ⟨hal-00133926⟩