Publicaciones

• Article dans une revue

Thermally assisted formation of silicon islands on a silicon-on-insulator substrate

Bernard Legrand, Vincent Agache, Jean-Philippe Nys, Thierry Melin, Vincent Senez, Didier Stiévenard

We report the self-formation of nanometer-size silicon islands on a silicon-on-insulator (SOI) substrate that is associated with simple thermal treatment in the range of 500–900 °C. We study the island formation process versus the temperature of the thermal annealing, the thickness of the top...

Journal of Applied Physics, 2002, 91, pp.106-111. ⟨10.1063/1.1420761⟩. ⟨hal-00149668⟩

• Communication dans un congrès

Diffusion d'un élement V à partir d'une surface d'un semiconducteur III-V, influence de la reconstruction et de la morphologie

C. Priester

Journées Surfaces et Interfaces, JSI 2002, 2002, Toulouse, France. ⟨hal-00149684⟩

• Communication dans un congrès

Modélisation numérique et caractérisation expérimentale du champ de cavitation ultrasonore

P. Mosbah, Bertrand Dubus, O. Ledez, C. Campos-Pozuelo, C. Granger

2002, pp.747-750. ⟨hal-00147777⟩

• Article dans une revue

Fast electromagnetic characterization method of film-shaped materials using coplanar up to V-band

J. Hinojosa, K. Lmimouni, Gilles Dambrine

Electronics Letters, 2002, 38, pp.373-374. ⟨hal-00147838⟩

• Communication dans un congrès

Solid-state 8 GHz transient signal digitizer characterization

A. Ghis, P. Ouvrier-Buffet, N. Rolland, A. Benlarbi-Delai, P.A. Rolland, D. Glay, D. Jaeger

2002, pp.1673-1676. ⟨hal-00148329⟩

• Article dans une revue

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

C. Mavroidis, J. Harris, R. Jackman, I. Harrison, B. Ansell, Z. Bougrioua, I. Moerman

We have combined plasma etching with the Hall effect and resistivity measurements between 10 and 300 K to study the depth distribution of conduction in silicon (Si)-doped GaN epitaxial layers grown on sapphire substrates by two different metalorganic chemical vapor deposition processes. Reduction...

Journal of Applied Physics, 2002, 91 (12), pp.9835. ⟨10.1063/1.1477604⟩. ⟨hal-02906594⟩

• Article dans une revue

Microwave technique for detection, location and sizing of buried objects

Latifa Achrait-Furlan, T. Lasri, Ahmed Mamouni

The detection, location, and sizing of immersed objects in a host medium are tasks of interest in many fields. One of the most suitable tools for the noninvasive measurements of buried objects is the use of microwaves. We propose in this paper a microwave method based on the knowledge of the...

Microwave and Optical Technology Letters, 2002, 32 (2), pp.145-149. ⟨10.1002/mop.10115⟩. ⟨hal-00147852⟩

• Article dans une revue

Photodissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J.A. Larsson, M. Nolan, M. Murthag, J.C. Greer, M. Barbe, F. Bailly, Jérome Chevalier, S. Sylvestre, D. Loridant-Bernard, E. Constant, M. Constant

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the SiGa–H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 186, pp.234-239. ⟨10.1016/S0168-583X(01)00949-1⟩. ⟨hal-00278930⟩

• Autre publication scientifique

Du modèle de canal de propagation à l'optimisation des systèmes de télécommunications

M. Lienard

2002. ⟨hal-00577049⟩

• Communication dans un congrès

High-frequency high-Q micro-mechanical resonators in thick epipoly technology with post-process gap adjustment

D. Galayko, A. Kaiser, Bernard Legrand, C. Combi, D. Collard, L. Buchaillot

2002, pp.665-668. ⟨hal-00148737⟩