Publicaciones
Affichage de 15511 à 15520 sur 16434
Analog design reuse : a case study. Very low-voltage analog Sigma-Delta modulator
M. Dessouki, A. Kaiser, M.M. Louërat, A. Greiner
2001, pp.353-360. ⟨hal-00152205⟩
Etude d'applicateurs filaires pour thermothérapie micro-onde. Configuration clinique
J.C. Camart, Luc Dubois, M. Chive, J. Pribetich
Actes des 12èmes Journées Nationales Microondes, JNM 2001, 2001, Poitiers, France. ⟨hal-00152044⟩
Effet d'auto-collimation pour des sources hyperfréquences à cavité à bande interdite photonique
Jérôme Danglot, Tahsin Akalin, Olivier Vanbésien, Didier Lippens
Actes des 12èmes Journées Nationales Microondes, JNM 2001, May 2001, Poitiers, France. ⟨hal-00152051⟩
Mechanical properties of thin film materials for the 2D numerical analysis of deep submicron CMOS technologies
V. Senez, G. Carlotti, I. de Wolf, R. Balboni, A. Benedetti, D. Piccolo, G. Mastracchio
Proceedings of the 2001 Material Research Society Fall Meeting, 2001, Boston, MA, United States. ⟨hal-00152221⟩
Power LDMOS design using an SOI RESURF architecture : on state / breakdown voltage trade-off
Emmanuel Dubois, K. Suzuki, E. Lampin
Franco-Swedish Workshop on SOI, 2001, Grenoble, France. ⟨hal-00152238⟩
On the non top-on-top vertical correlation in multistacked systems : the role of alloy spacer layers
C. Priester, G. Grenet
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, pp.125312/1-5. ⟨hal-00152562⟩
2D-hydrodynamic energy model including breakdown phenomenon for power field effect transistor
Michel Rousseau, Jean-Claude de Jaeger
VLSI Systems Design, 2001, 13, pp.323-328. ⟨hal-00152593⟩
L'interface physique biologie
D. Stievenard
Journées Micro et Nanotechnologies, 2001, Paris, France. ⟨hal-00152581⟩
Modélisation par éléments finis du comportement des alliages à mémoire de forme
S. Rafanomezantsoa
2001. ⟨hal-00151684⟩
Structural and electronic studies of InAs quantum dots embedded in GaAs by scanning tunneling microscopy
B. Grandidier
Alaska Meeting on Fundamental Optical Properties in Semiconductors, 2001, Girdwood, AK, United States. ⟨hal-00152583⟩