Publicaciones

• Article dans une revue

Further studies on the lithium phosphorus oxynitride solid electrolyte

T. Pichonat, C. Lethien, Nicolas Tiercelin, S. Godey, E. Pichonat, P. Roussel, Marie Colmont, P.A. Rolland

First step in the way to the fabrication of an all-solid microbattery for autonomous wireless sensor node, amorphous thin solid films of lithium phosphorus oxynitride (LiPON) were prepared by radio-frequency sputtering of a mixture target of P₂O₅/Li<...

Materials Chemistry and Physics, 2010, 123, pp.231 - 235. ⟨10.1016/j.matchemphys.2010.04.001⟩. ⟨hal-00514193⟩

• Article dans une revue

Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse

M. Gassoumi, O. Fathallah, Christophe Gaquière, H. Maaref

Physica B: Condensed Matter, 2010, 405, pp.2337-2339. ⟨10.1016/j.physb.2010.02.042⟩. ⟨hal-00549453⟩

• Article dans une revue

Perfectly (001)- and (111)-oriented (Ba,Sr)TiO3 thin films sputtered on Pt/TiOx/SiO2/Si without buffer layers

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.350-352. ⟨10.1111/j.1551-2916.2009.03427.x⟩. ⟨hal-00549519⟩

• Article dans une revue

Quasi-monolithic heat flux microsensor based on porous silicon boxes

K. Ziouche, P. Godts, Z. Bougrioua, C. Sion, T. Lasri, D. Leclercq

Sensors and Actuators A: Physical , 2010, 164, pp.35-40. ⟨10.1016/j.sna.2010.09.015⟩. ⟨hal-00549493⟩

• Article dans une revue

Optimization of SiNX:H films deposited by PECVD for reliability of electronic, microsystems and optical applications

E. Herth, Bernard Legrand, L. Buchaillot, N. Rolland, T. Lasri

Microelectronics Reliability, 2010, 50, pp.1103-1106. ⟨10.1016/j.microrel.2010.04.011⟩. ⟨hal-00549491⟩

• Article dans une revue

An efficient speech recognition system in adverse conditions using the nonparametric regression

A. Amrouche, M. Debyeche, Abdelmalik Taleb-Ahmed, Jean-Michel Rouvaen, M.C.E. Yagoub

Engineering Applications of Artificial Intelligence, 2010, 23, pp.85-94. ⟨10.1016/j.engappai.2009.09.006⟩. ⟨hal-00549462⟩

• Article dans une revue

Thermal noise in MOSFETs : a two- or a three-parameter noise model ?

M. Emam, P. Sakalas, D. Vanhoenacker-Janvier, J.P. Raskin, T.C. Lim, Francois Danneville

IEEE Transactions on Electron Devices, 2010, 57, pp.1188-1191. ⟨10.1109/TED.2010.2044286⟩. ⟨hal-00548567⟩

• Article dans une revue

Validation of the 2 temperatures noise model using pre-matched transistors in W-band for sub-65 nm technology

N. Waldhoff, Y. Tagro, D. Gloria, F. Gianesello, Francois Danneville, Gilles Dambrine

IEEE Microwave and Wireless Components Letters, 2010, 20, pp.274-276. ⟨10.1109/LMWC.2010.2045588⟩. ⟨hal-00548601⟩

• Article dans une revue

Alpha-stable multiple access interference modelling for amplify-and-forward multihop ad hoc networks

Jie Chen, Laurent Clavier, N. Rolland, P.A. Rolland

Electronics Letters, 2010, 46, pp.1160-1162. ⟨10.1049/el.2010.1465⟩. ⟨hal-00548624⟩

• Article dans une revue

Picosecond carrier lifetime in low-temperature-grown GaAsSb

X. Wallart, Christophe Coinon, S.R. Plissard, S. Godey, Olivier Offranc, Ydir Androussi, Vincent Magnin, Jean-Francois Lampin

We study the influence of growth parameters on the properties of low-temperature-grown GaAsSb layers with 15–20% Sb. We demonstrate that a proper choice of growth conditions allows achieving monocrystalline as-grown layers exhibiting carrier lifetime around 1 ps and a resistivity higher than 1 kΩ·...

Japanese Journal of Applied Physics, part 2 : Letters, 2010, 3, pp.111202-1-3. ⟨10.1143/APEX.3.111202⟩. ⟨hal-00548732⟩