Publicaciones

• Article dans une revue

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Yvon Cordier, Fabrice Semond, Jean-Christophe Moreno, Éric Frayssinet, Brahim Benbakhti, Z. Cao, Sébastien Chenot, Lee Nguyen, Olivier Tottereau, Ali Soltani, Karine Blary

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩. ⟨hal-00473644⟩

• Article dans une revue

(6 x 2) Reconstruction of the Ag/Si(111) surface at 77 K (vol 603, pg 311, 2009) - Corrigendum

A. Urbieta, K. Schulte, B. Grandidier, D. Deresmes, S.C. Erwin, D. Stievenard

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2009, 603, pp.1079-1079. ⟨10.1016/j.susc.2009.02.002⟩. ⟨hal-00473064⟩

• Communication dans un congrès

Molecular dynamics simulation for advanced silicon recrystallization effect

Christophe Krzeminski, E. Lampin

European Materials Research Society Spring Meeting, E-MRS Spring 2009, Symposium I : Silicon and Germanium issues for future CMOS devices, 2009, Strasbourg, France. ⟨hal-00575269⟩

• Communication dans un congrès

An Ontology-Based Spatial Clustering Selection System

Wei Gu, Xin Wang, Danielle Ziébelin

Canadian Conference on AI, 2009, Kelowna, Canada. pp.215-218, ⟨10.1007/978-3-642-01818-3_27⟩. ⟨hal-00953205⟩

• Article dans une revue

Surface ordering of molecular structures by dispersion forces

F. Cleri

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 80, pp.235406-1-6. ⟨10.1103/PhysRevB.80.235406⟩. ⟨hal-00473382⟩

• Article dans une revue

Nonlinear modeling of InP devices for W-band applications

D. Resca, V. Di Giacomo, A. Raffo, R. Cignani, A. Santarelli, G. Vannini, F. Filicori, D. Schreurs, F Medjdoub, N. Thouvenin, Christophe Gaquière

International Journal of Microwave and Wireless Technologies, 2009, 1, pp.145-151. ⟨10.1017/S1759078709000099⟩. ⟨hal-00473633⟩

• Article dans une revue

Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

M. Faucher, B. Grimbert, Y. Cordier, N. Baron, A. Wilk, H. Lahreche, P. Bove, M. Francois, P. Tilmant, T. Gehin, C. Legrand, M. Werquin, L. Buchaillot, Christophe Gaquière, D. Theron

Applied Physics Letters, 2009, 94, pp.233506-1-3. ⟨10.1063/1.3153504⟩. ⟨hal-00472724⟩

• Communication dans un congrès

Analog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs

M. Emam, M.A. Pavanello, Francois Danneville, D. Vanhoenacker-Janvier, J.P. Raskin

39th European Solid-State Device Research Conference, ESSDERC 2009, 2009, Greece. pp.125-128, ⟨10.1109/ESSDERC.2009.5331397⟩. ⟨hal-00474099⟩

• Communication dans un congrès

Scalability in a dynamic discovery service-based Jini for the next generation vehicle network

T. Lahdhiri, R. Baroody, N. Al-Holou, Iyad Dayoub, U. Mohammad

IEEE Symposium on Computers and Communications, ISCC'09, 2009, Tunisia. pp.30-35, ⟨10.1109/ISCC.2009.5202398⟩. ⟨hal-00474155⟩

• Communication dans un congrès

MEMS resonators actuated by TbCo/FeCo nanostructured magnetostrictive multilayers in liquid environment

O. Ducloux, J.W. Park, Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensky, M. Hamon, Y. Sakai, H. Fujita

15th International Conference on Solid State Sensors, Actuators and Microsystems, Transducers 2009, 2009, United States. pp.1019-1022, ⟨10.1109/SENSOR.2009.5285961⟩. ⟨hal-00474089⟩