Publicaciones

Affichage de 11761 à 11770 sur 16474


  • Article dans une revue

Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy

M. Gassoumi, J.M. Bluet, G. Guillot, Christophe Gaquière, H. Maaref

Materials Science and Engineering: C, 2008, 28, pp.787-790. ⟨10.1016/j.msec.2007.10.068⟩. ⟨hal-00357801⟩

  • Article dans une revue

Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, Sébastien Chenot, O. Tottereau, J. Massies, P. Gibart

Journal of Crystal Growth, 2008, 310, pp.948-954. ⟨10.1016/j.jcrysgro.2007.11.161⟩. ⟨hal-00357273⟩

  • Article dans une revue

Location and communication using cooperative radar system dedicated to guided transports

Yassin El Hillali, C. Tatkeu, Atika Rivenq, Jean-Michel Rouvaen, J.P. Ghys

Transportation Research Part C: Emerging Technologies, 2008, 16, pp.141-152. ⟨10.1016/j.trc.2007.07.008⟩. ⟨hal-00356903⟩

  • Article dans une revue

Study of the fundamental Lamb modes interaction with asymmetrical discontinuities

Farouk Benmeddour, Sébastien Grondel, Jamal Assaad, Emmanuel Moulin

NDT & E International, 2008, 41, pp.330-340. ⟨10.1016/j.ndteint.2008.01.004⟩. ⟨hal-00360328⟩

  • Article dans une revue

Modeling and analysis of in-vehicle power line communication channels

M. Lienard, M.O. Carrion, Virginie Degardin, Pierre Degauque

IEEE Transactions on Vehicular Technology, 2008, 57, pp.670-679. ⟨10.1109/TVT.2007.906372⟩. ⟨hal-00360050⟩

  • Article dans une revue

RF small signal analysis of Schottky-barrier p-MOSFETs

R. Valentin, Emmanuel Dubois, J.P. Raskin, G. Larrieu, Gilles Dambrine, T.C. Lim, N. Breil, Francois Danneville

This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer -parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted and discussed for a -gate-length SB MOSFET. Then, using ac simulations, HF...

IEEE Transactions on Electron Devices, 2008, 55, pp.1192-1202. ⟨10.1109/TED.2008.919382⟩. ⟨hal-00356664⟩

  • Article dans une revue

Sonic band gaps in one-dimensional phononic crystals with a symmetric stub

Anne-Christine Hladky, Jerome O. Vasseur, Bahram Djafari-Rouhani, M. de Billy

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.104304-1-7. ⟨10.1103/PhysRevB.77.104304⟩. ⟨hal-00356646⟩

  • Article dans une revue

InP/benzocyclobutene optical nanowires

Michèle Carette, Jean-Pierre Vilcot, D. Bernard, Didier Decoster

Electronics Letters, 2008, 44, pp.902-903. ⟨10.1049/el:20081169⟩. ⟨hal-00357307⟩

  • Article dans une revue

Growth of Si nanowires on micropillars for the study of their dopant distribution by atom probe tomography

T. Xu, J.P. Nys, B. Grandidier, D. Stievenard, Yannick Coffinier, Rabah Boukherroub, R. Larde, E. Cadel, P. Pareige

Journal of Vacuum Science and Technology, 2008, 26, pp.1960-1963. ⟨10.1116/1.3021371⟩. ⟨hal-00357357⟩

  • Article dans une revue

Kelvin force microscopy at the second cantilever resonance : an out-of-vacuum crosstalk compensation setup

H. Diesinger, D. Deresmes, J.P. Nys, Thierry Melin

Ultramicroscopy, 2008, 108, pp.773-781. ⟨hal-00357370⟩